Sputtering Chamber Plasma Cleaning for Redeposition Removal
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Solution Overview
Problem
Existing sputtering apparatuses face issues with redeposited materials in the process chamber, which can interrupt subsequent processes and require opening the chamber for cleaning.
Innovation Solution
A method involving the use of oxygen gas to oxidize redeposited materials within the sputtering apparatus, utilizing RF coils and heating devices to manage plasma discharge, allowing for in-situ cleaning without opening the chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the process chamber is opened for cleaning redeposited materials, then the chamber can be thoroughly cleaned, but the subsequent processes are interrupted and productivity decreases
Solution Approach 1:
The patent replaces mechanical cleaning methods (which require opening the chamber) with a plasma-based chemical cleaning system. The plasma generation unit creates reactive plasma species that chemically react with and remove redeposited materials without requiring physical access to the chamber interior, thus maintaining process continuity while achieving effective cleaning.
Solution Approach 2:
The patent introduces plasma as an intermediary substance to facilitate the cleaning process. The plasma generation unit produces plasma that acts as a mediator between the cleaning requirement and the redeposited materials, enabling removal of contaminants through chemical reactions rather than direct mechanical intervention, thereby avoiding chamber opening and process interruption.
2Reliability
If high RF power is continuously applied for cleaning, then redeposited materials are removed effectively, but energy consumption increases
Solution Approach 1:
The patent implements periodic RF power application with varying intensity levels. The control unit adjusts the RF power in multiple stages: initial high power to break down heavy redeposited materials, followed by reduced power for maintenance cleaning. This periodic variation in power intensity achieves effective cleaning while minimizing overall energy consumption compared to continuous high-power operation.
Solution Approach 2:
The patent dynamically changes RF power parameters (intensity, duration, frequency) based on the cleaning stage and chamber conditions. The control unit monitors cleaning progress and adjusts power levels accordingly, transitioning from high-power aggressive cleaning to low-power maintenance mode, thereby optimizing the balance between cleaning effectiveness and energy consumption.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively removes redeposited materials, ensuring uninterrupted subsequent processes and reducing energy consumption by optimizing RF power usage.
Implementation Method 1
a discharge tube which provides a plasma discharge space extended to the process space
Implementation Method 2
oxidizing a remaining portion of the first material deposited in the sputtering apparatus after the removing the portion of the first material deposited in the sputtering apparatus
Implementation Method 3
an RF coil which wraps the discharge tube
Implementation Method 4
a heating device which heats the discharge tube
Data Source
AI summary
A method for cleaning a sputtering apparatus includes removing a portion of a first material deposited in the sputtering apparatus, and oxidizing a remaining portion of the first material deposited in the sputtering apparatus after the removing the portion of the first material deposited in the sputtering apparatus. The sputtering apparatus includes a process chamber which provides a process space, a stage within the process space, a discharge tube which provides a plasma discharge space extended to the process space, and a radio frequency (“RF”) coil which wraps the discharge tube. The oxidizing the remaining portion of the first material deposited in the sputtering apparatus includes supplying an oxygen gas to the plasma discharge space.


