Sputtering Apparatus Shielding for Catalyst Uniformity
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Solution Overview
Problem
Sputtering apparatuses face challenges in depositing a metal catalyst at an extremely low concentration on an amorphous silicon layer without causing non-uniformity, particularly during the pre-sputtering process, which reduces process efficiency and degrades the characteristics of thin film transistors in OLED display devices.
Innovation Solution
A sputtering apparatus is designed to move a metal target without a magnetic assembly, using a process chamber with distinct regions for pre-sputtering and deposition, and incorporating a first shield to control the traveling direction of the metal catalyst, with a distance difference between the substrate and the shield of less than 3 cm to minimize non-uniformity and maintain process efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a separate shield is used to isolate the plasma production area during pre-sputtering, then metal catalyst deposition uniformity is improved, but the deposition process is delayed, reducing overall process efficiency
Solution Approach 1:
The shield is integrated into the target transfer unit structure rather than being a separate component. This merging eliminates the need for separate shield formation and removal steps, preventing deposition delays while maintaining the plasma isolation function needed for uniform catalyst deposition.
Solution Approach 2:
The shield is designed to move with the target transfer unit, dynamically positioning itself to block metal catalyst during pre-sputtering and allowing unobstructed deposition during the deposition process. This dynamic configuration maintains uniformity without sacrificing process efficiency.
2Productivity
If a magnetic assembly is used to concentrate plasma on the metal target and substrate, then deposition speed is improved, but the metal catalyst becomes magnetized, degrading TFT characteristics
Solution Approach 1:
The magnetic assembly is completely removed from the sputtering apparatus. Instead of using magnetic fields to concentrate plasma, the apparatus relies on other mechanisms to achieve uniform plasma distribution and efficient metal catalyst deposition without causing magnetization of the catalyst, thereby preserving TFT characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the uniformity of the metal catalyst deposition on the amorphous silicon layer at extremely low concentrations, preventing magnetization and maintaining high process efficiency, thereby improving the stability and performance of thin film transistors in OLED displays.
Implementation Method 1
a sputtering process of depositing a metal layer on a substrate by applying plasma to a metal target formed of a crystallization-inducing metal such as nickel
Implementation Method 2
by applying plasma to a metal target
Data Source
AI summary
Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target. A distance difference between a linear distance, which is a distance between a substrate loaded on the substrate holder and the metal target, and a length of the first shield is less than 3 cm.