Sputtering Target and Active Species Source Integration
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Solution Overview
Problem
Existing sputtering methods for forming optical multilayer films on large substrates face challenges with low film deposition rates, particularly in RF and DC reactive sputtering modes, and require spatial and pressure-wise separation of the target and reactive gas sources, limiting the applicability to small substrates.
Innovation Solution
A thin film formation apparatus with a target and active species source arranged to produce mutual electromagnetic and pressure interactions within a vacuum chamber, allowing for high film deposition rates by generating plasma interactions between the target and active species, enabling the formation of metal compounds in the metal or transitional region mode without spatial or pressure-wise separation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If spatial and pressure-wise separation of target and reactive gas source is implemented, then metal compound formation is achieved, but film deposition rate decreases and substrate size is limited
Solution Approach 1:
The patent merges the target and reactive gas source into a single integrated sputtering chamber, eliminating the need for spatial and pressure-wise separation. The reactive gas is introduced directly into the chamber where sputtering occurs, allowing simultaneous metal compound formation and high deposition rates on large substrates
2Manufacturing precision
If spatial and pressure-wise separation of target and reactive gas source is implemented, then metal compound formation is achieved, but substrate size capability is limited
Solution Approach 1:
The patent merges the target and reactive gas source into a single integrated sputtering chamber, eliminating the need for spatial and pressure-wise separation. The reactive gas is introduced directly into the chamber where sputtering occurs, allowing simultaneous metal compound formation and high deposition rates on large substrates
3Manufacturing precision
If reactive gas flow rate ratio is increased to form metal compounds, then compound film quality is improved, but film deposition rate decreases
Solution Approach 1:
The patent changes the operational parameters by introducing reactive gas during sputtering in the metal mode region (low reactive gas flow rate ratio), rather than operating in reactive mode with high gas flow rates. This parameter change allows high deposition rates while still forming metal compound films through subsequent oxidation or nitridation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances plasma density and sputtering efficiency, allowing for high film deposition rates on large substrates without the need for spatial or pressure-wise separation, thus enabling the formation of optical multilayer films with improved reaction efficiency using reduced reactive gas amounts.
Implementation Method 1
an energy source for exciting the reactive gas into a plasma state by supplying an energy within the vacuum chamber
Implementation Method 2
a target and an active species source arranged to produce mutual electromagnetic and pressure interactions
Implementation Method 3
a method of forming a thin film by sputtering
Data Source
Figure 1
Figure 2
Figure 3
AI summary
Provided are a thin film formation apparatus, a sputtering cathode, and a method of forming thin film, capable of forming a multilayer optical film at a high film deposition rate on a large-sized substrate. The thin film formation apparatus 1 forms a thin film of a metal compound on a substrate 43 in a vacuum chamber 21 by sputtering. The vacuum chamber 21 is provided in its inside with targets 63a and b composed of metal or a conductive metal compound, and an active species source for generating an active species of a reactive gas, arranged to produce mutual electromagnetic and pressure interactions with the targets 63a and b. The active species source is provided with gas sources 76 and 77 for supplying the reactive gas, and an energy source 80 for supplying energy into the vacuum chamber to excite the reactive gas to a plasma state. The energy source 80 is provided between itself and the vacuum chamber 21 with a dielectric window for supplying the energy into the vacuum chamber 21. The dielectric window is arranged in parallel with the substrate 43, or in such a way as inclining towards the targets 63a and b side with an angle of less than 90° to the substrate 43.