Sputtering Target for Amorphous Oxide Transistors
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Solution Overview
Problem
Semiconductor devices with amorphous oxide active layers, such as In—Zn—Ga—O-based oxides, face issues of small on-state current and decreased reliability, along with high subthreshold swing and threshold voltage, leading to suboptimal electrical characteristics.
Innovation Solution
A sputtering target comprising a conductive material with indium and zinc, and an insulating material with elements like Ga, Al, or Si, separated to form a metal oxide with enhanced electrical properties, including increased carrier mobility and reduced oxygen vacancies, is used to manufacture semiconductor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If an amorphous oxide active layer is used in a transistor, then the device structure is simplified and manufacturing is easier, but the on-state current becomes small and reliability decreases
Solution Approach 1:
The invention changes the chemical composition parameters of the oxide semiconductor by introducing specific elements (In, Ga, Zn, Al, Si, Mg, B) in controlled ratios. This compositional parameter optimization enables the material to achieve both ease of amorphous formation and high reliability through improved electrical characteristics including higher on-state current and better stability.
Solution Approach 2:
The invention creates a composite oxide semiconductor material combining multiple elements (In-Ga-Zn-Al-O, In-Ga-Zn-Si-O, etc.) to achieve synergistic effects. The composite structure provides both the manufacturing simplicity of amorphous materials and the reliability of optimized electrical properties through controlled element combinations.
2Ease of manufacture
If an amorphous oxide active layer is used in a transistor, then the manufacturing process is simpler, but the on-state current is small
Solution Approach 1:
The invention optimizes the compositional parameters of the oxide semiconductor by controlling the ratios of In, Ga, Zn, and other elements. This parameter optimization increases carrier concentration and mobility, thereby enhancing on-state current while preserving the simple amorphous manufacturing process.
Solution Approach 2:
The composite oxide structure with multiple elements creates synergistic effects that boost electrical conductivity and on-state current. The specific combination of In-Ga-Zn-based oxides with additional elements achieves high current capability while maintaining amorphous phase simplicity for easy manufacturing.
3Device complexity
If an amorphous oxide active layer is used in a transistor, then the device structure is simpler, but field-effect mobility is reduced
Solution Approach 1:
The invention adjusts the compositional parameters of the oxide semiconductor, specifically optimizing the ratios of In, Ga, Zn, and dopant elements to enhance carrier mobility. This parameter control enables high field-effect mobility while maintaining the simple amorphous device structure without requiring complex crystalline arrangements.
Solution Approach 2:
The composite oxide material combines multiple elements that work synergistically to improve carrier transport properties. The In-Ga-Zn-based composite structure with controlled element ratios achieves high field-effect mobility intrinsic to the material composition, eliminating the need for complex device architectures.
4Ease of manufacture
If an amorphous oxide active layer is used in a transistor, then manufacturing is easier, but threshold voltage control is suboptimal
Solution Approach 1:
The invention precisely controls the compositional parameters of the oxide semiconductor, including the ratios of In, Ga, Zn, and dopant elements (Al, Si, Mg, B). This compositional precision enables accurate threshold voltage control during manufacturing, allowing optimization of device characteristics without complicating the amorphous fabrication process.
Solution Approach 2:
The composite oxide structure with controlled element combinations provides inherent control over electrical characteristics including threshold voltage. The specific In-Ga-Zn-based composite with dopants achieves precise voltage control through material composition rather than complex manufacturing processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution results in semiconductor devices with improved electrical characteristics, higher reliability, and enhanced field-effect mobility, addressing the limitations of existing amorphous oxide-based transistors.
Implementation Method 1
a sputtering target comprising a conductive material with indium and zinc, and an insulating material with elements like Ga, Al, or Si, separated to form a metal oxide
Data Source
AI summary
A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.