Sb-Te Sputtering Target Composite Structure
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Solution Overview
Problem
Sb-Te base alloy sputtering targets face issues with particle generation, abnormal discharges, and target cracking during the sputtering process, which deteriorate the quality of phase change recording films, especially due to inadequate target structure and high oxygen content.
Innovation Solution
An Sb-Te base alloy sputtering target with a structure where Sb-Te base alloy particles are surrounded by fine carbon or boron particles, with a specific particle size ratio and content, and optionally including elements like Ag, In, Ge, Ga, Ti, Au, Pt, and Pd, to enhance electrical resistance and inhibit particle generation and arcing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional sputtering targets are used, then film formation is achieved, but particle generation and abnormal discharges occur during sputtering
Solution Approach 1:
The patent applies composite materials by combining Sb-Te base alloy particles with fine carbon or boron particles to form a composite sputtering target. This composite structure suppresses particle generation and abnormal discharges during sputtering, while maintaining the phase change recording film formation capability. The fine carbon or boron particles (0.1-10 at%) act as a matrix that prevents coarsening and stabilizes the target structure during sputtering process.
Solution Approach 2:
The patent changes the compositional parameters by adding specific amounts of carbon or boron (0.1-10 at%) to the Sb-Te base alloy. This parameter change transforms the target from a conventional homogeneous structure to a composite structure with fine particle distribution, which fundamentally alters the sputtering behavior and eliminates particle generation and abnormal discharges.
2Productivity
If conventional sputtering targets are used, then film deposition is achieved, but target cracking occurs during sputtering process
Solution Approach 1:
The composite structure of Sb-Te base alloy particles surrounded by fine carbon or boron particles enhances target structural integrity. The fine particles act as a binding matrix that distributes stress uniformly, preventing crack propagation and target fragmentation during prolonged sputtering operations, thereby maintaining target strength while enabling continuous film deposition.
Solution Approach 2:
The patent applies local quality by creating a heterogeneous structure where fine carbon or boron particles are distributed throughout the target matrix. This local reinforcement at the particle level prevents stress concentration and crack initiation, while the overall target maintains its structural integrity for sustained productivity.
3Reliability
If conventional sputtering targets are used, then sputtering process is achieved, but electrical resistance is insufficient for high-density recording
Solution Approach 1:
The addition of carbon or boron (0.1-10 at%) to the Sb-Te base alloy creates a composite structure that increases electrical resistance. This is critical for high-density phase change recording where higher resistance enables better signal discrimination and reduces crosstalk between adjacent recording marks, thereby improving recording performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The target effectively prevents abnormal discharges, particle generation, and target cracking, resulting in improved film quality and stability, suitable for high-density phase change recording applications.
Implementation Method 1
wherein, if the mean diameter of the Sb-Te base alloy particles is X and the particle size of carbon or boron is Y, Y/X is within the range of 1/10 to 1/10000
Implementation Method 2
Formation of films by way of the sputtering method is performed by physically colliding positive ions such as Ar ions to a target disposed on a cathode, using that collision energy to discharge materials configuring the target
Data Source
Figure 1~2
AI summary
Provided is an Sb-Te base alloy sinter sputtering target having Sb and Te as its primary component and comprising a structure in which Sb-Te base alloy particles are surrounded by fine carbon or boron particles; wherein, if the mean diameter of the Sb-Te base alloy particles is X and the particle size of carbon or boron is Y, Y/X is within the range of 1/10 to 1/10000. The present invention seeks to improve the Sb-Te base alloy sputtering target structure, inhibit the generation of cracks in the sintered target, and prevent the generation of arcing during the sputtering process.