Sb-Te Alloy Sputtering Target Grain Size Control
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Solution Overview
Problem
Conventional methods for manufacturing Sb—Te alloy sputtering targets face issues such as particle generation, abnormal electrical discharge, nodule formation, crack generation, and high oxygen content, leading to poor quality phase-change recording layers.
Innovation Solution
The development of Sb—Te alloy powder with a maximum grain size of 90 μm or less, achieved through gas atomization followed by mechanical pulverization in an inert atmosphere, reduces oxygen content and tabular particle formation, resulting in a uniform and refined target structure with low surface roughness and high strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional sintering powder is used, then manufacturing process is simple, but particle generation, abnormal electrical discharge, nodule formation, and crack generation occur during sputtering
Solution Approach 1:
The patent applies preliminary action by controlling the grain size of the sintering powder to 90 μm or less before the sputtering process. This pre-control of particle characteristics prevents particle generation, abnormal electrical discharge, and crack formation during sputtering, thereby improving reliability without significantly complicating the manufacturing process
Solution Approach 2:
The patent changes the critical parameter of grain size to 90 μm or less, which fundamentally alters the behavior of the sintering powder during sputtering. This parameter change eliminates harmful effects such as particle generation and electrical discharge instability, resolving the contradiction between reliability and manufacturing ease
2Reliability
If oxygen is not controlled during sintering, then manufacturing process is simple, but large quantities of oxygen are absorbed in the target
Solution Approach 1:
The patent employs an inert atmosphere during the sintering process to prevent oxygen absorption in the target. By creating an oxygen-free environment, the method reduces oxygen content in the sintered compact to 700 ppm or less, improving target quality while maintaining manufacturing simplicity through the use of standard inert gas handling procedures
3Reliability
If grain size is not controlled, then powder manufacturing is simple, but generation of particles and cracks occurs during sputtering
Solution Approach 1:
The patent establishes a specific grain size parameter of 90 μm or less as a critical control point in powder manufacturing. This precise grain size control prevents particle generation and crack formation during sputtering, achieving both high reliability and manufacturability through optimized particle characteristics
4Reliability
If conventional powder is used, then cost is low, but generation of nodules and cluster-shaped films occurs
Solution Approach 1:
The patent applies preliminary action by pre-controlling the grain size and morphology of the sintering powder to prevent nodule and cluster-shaped film formation during sputtering. This advance preparation ensures uniform film deposition and eliminates surface defects, improving film quality without requiring complex post-processing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach inhibits crack generation, arcing, and particle formation, stabilizes the phase-change recording layer quality, and enhances the transverse rupture strength of the sputtering target, reducing in-plane and lot-to-lot variability and surface ruggedness.
Implementation Method 1
gas atomization followed by mechanical pulverization
Implementation Method 2
mechanical pulverization in an inert atmosphere
Implementation Method 3
sintered compact sputtering target obtained by sintering this powder
Implementation Method 4
a magnetron sputtering method is often used for forming such a thin film
Data Source
AI summary
Provided is Sb—Te alloy powder for sintering in which the maximum grain size of the powder obtained by subjecting gas atomized powder of an Sb—Te alloy to mechanical pulverization is 90 μm or less, and a sintered compact sputtering target obtained by sintering this powder. Further provided is a manufacturing method of Sb—Te alloy powder for a sintered compact sputtering target including the steps of dissolving an Sb—Te alloy, thereafter subjecting this to gas atomization to obtain atomized powder, and further subjecting this to mechanical pulverization in an inert atmosphere without any atmospheric exposure so as to manufacture powder having a maximum grain size of 90 μm or less and reduced oxygen content. Thus, the Sb—Te alloy sputtering target structure can be uniformalized and refined, generation of cracks in the sintered target can be inhibited, and generation of arcing during sputtering can be inhibited. Further, surface ruggedness caused by sputter erosion can be reduced in order to obtain a high quality Sb—Te alloy sputtering target.