Sb-Te Sputtering Target Oxide Grain Control
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Solution Overview
Problem
Sb—Te-based alloy sintered targets used in phase change recording suffer from abnormal discharge, nodules, particles, cracks, and non-uniformity due to oxygen and oxide-related issues during sputtering, leading to poor film quality and yield.
Innovation Solution
A Sb—Te-based alloy sintered target with controlled oxygen content and refined oxide grains, where the average grain size of oxides is 0.5 μm or less, and the number of oxide grains larger than 1 μm is 0.5% or less, along with specific elements like Ga, Ti, Au, Pt, Pd, Bi, B, C, Mo, and Si, to inhibit abnormal discharge and improve film uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional sintering methods are used to produce Sb-Te-based alloy targets, then production cost and process simplicity are maintained, but abnormal discharge, particles, nodules, cracks, and non-uniformity occur during sputtering
Solution Approach 1:
The invention changes the sintering parameters by controlling oxygen content within 1500-2500 wtppm and oxide grain size to 0.5 μm average maximum, which transforms the target's microstructure to prevent abnormal discharge and particles during sputtering while maintaining production feasibility
Solution Approach 2:
The invention creates a composite target structure by incorporating controlled oxide particles (0.5 μm or less) within the Sb-Te-based alloy matrix, where the oxide grains act as nucleation sites that refine the microstructure and prevent abnormal discharge without compromising target uniformity
2Manufacturing precision
If oxygen content is reduced in the sintered target, then film quality improves, but target strength and structural integrity deteriorate
Solution Approach 1:
The invention optimizes the oxygen content parameter to a specific range of 1500-2500 wtppm, which is neither too high (causing film defects) nor too low (causing target weakness), achieving a balance where oxide grains serve as structural reinforcement while limiting film contamination
Solution Approach 2:
The invention applies local quality by distributing oxide grains uniformly throughout the target matrix at controlled concentrations, where oxides provide local structural support and nucleation sites without creating localized defects that would compromise overall target strength or film uniformity
3Reliability
If oxide grain size is reduced to 0.5 μm or less, then abnormal discharge and particles are suppressed, but production complexity and processing difficulty increase
Solution Approach 1:
The invention sets the oxide grain size parameter to 0.5 μm average maximum through controlled sintering conditions, which suppresses abnormal discharge and particle formation while using conventional sintering equipment and processes to avoid excessive production complexity
Solution Approach 2:
The invention performs preliminary action by controlling oxide grain formation during the sintering process itself rather than requiring post-processing steps, where the sintering parameters are optimized to naturally produce the desired fine oxide grain structure, simplifying the overall production process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach prevents abnormal discharge and particle generation, achieving stable sputtering and enhancing the uniformity of the sputtered film, thereby improving the quality and yield of phase change recording media.
Implementation Method 1
When forming a film via the sputtering method, positive ions such as Ar ions are physically collided with a target mounted on a cathode, the material configuring the target is sputtered using the collision energy, and a film having substantially the same composition as the target material is deposited on a substrate mounted on an anode facing the cathode
Data Source
AI summary
Sb—Te-based alloy sintered sputtering target having a Sb content of 10 to 60 at %, a Te content of 20 to 60 at %, and remainder being one or more types of elements selected from Ag, In, and Ge and unavoidable impurities, wherein an average grain size of oxides is 0.5 μm or less. An object of this invention is to improve the texture of the Sb—Te-based alloy sintered sputtering target in order to prevent the generation of arcing during sputtering and improve the thermal stability of the sputtered film.