Magnetron Sputtering Target Short Detection by Ground Resistance Monitoring
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Solution Overview
Problem
Target shorting during magnetron sputtering leads to electric arcs, which can cause local overheating or melting of the target material, affecting film quality and damaging integrated circuits on the substrate.
Innovation Solution
An apparatus with a resistance measurement meter to monitor the electrical resistance between the target and the electrical ground, allowing real-time detection of target shorting by measuring resistance values at low and high voltage levels, and sending alarm information if the resistance is too low.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If magnetron sputtering is performed without real-time monitoring, then the deposition process can proceed continuously, but target shorting cannot be detected timely leading to electric arcs and damage
Solution Approach 1:
The patent replaces complex mechanical monitoring systems with an electrical resistance measurement system. By measuring the electrical resistance between the target and ground, the system can detect target shorting conditions without requiring complex mechanical sensors or visual inspection systems.
Solution Approach 2:
The monitoring system utilizes the existing electrical circuitry of the magnetron sputtering apparatus itself to perform detection. The resistance measurement is conducted through the existing power supply connections, eliminating the need for separate dedicated sensing components and reducing overall system complexity.
2Measurement precision
If resistance measurement is performed at both low and high voltage levels, then detection accuracy is improved, but measurement time and process complexity increase
Solution Approach 1:
The patent performs resistance measurements at both low and high voltage levels during the initial target conditioning phase before actual deposition begins. This preliminary dual-level measurement ensures accurate detection of target shorting conditions without delaying the main deposition process.
Solution Approach 2:
The system implements periodic resistance measurements during the sputtering process at predetermined intervals or at specific process stages. This periodic monitoring maintains measurement precision while minimizing the time lost to measurements by conducting them only when necessary rather than continuously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables timely detection of target shorting, preventing damage to the target and ensuring the quality and safety of thin film deposition processes.
Implementation Method 1
a resistance measurement meter in electrical connection with an electrical ground point and the target, wherein the resistance measurement meter is configured to measure the electrical resistance between the electrical ground point and the target
Implementation Method 2
a magnetron configured to generate a magnetic field around a surface of the target, for electron confinement, and to facilitate the ignition and the sustaining of plasma
Implementation Method 3
the electrical field and the magnetic field generated around the surface of the target by the magnetron are capable of converting at least a part process gas within the chamber into the plasma
Implementation Method 4
the electrical field is capable of directing a part of ions in the plasma toward the target
Implementation Method 5
a main power supply, in electrical connection with the target, wherein the main power supply is configured to apply power the target to generate an electrical field inside the chamber, the electrical field and the magnetic field generated around the surface of the target by the magnetron are capable of converting at least a part process gas within the chamber into the plasma
Data Source
AI summary
An apparatus, method, and computer-readable storage medium for magnetron sputtering for thin film deposition. The apparatus may include a chamber for thin film deposition, configured to house a target configured to be held by a target holder, and a pedestal configured to support a substrate, and arranged opposite to the target; a magnetron configured to generate a magnetic field around a surface of the target, for electron confinement, and to facilitate ignition and maintenance of plasma; a main power supply, configured to apply power to the target to form an electrical field, the electrical and magnetic fields can convert at least a part of working gas into the plasma, and the electrical field can direct a part of ions in the plasma toward the target; and a resistance measurement meter in electrically connection with each of an electrical ground point and the target, and configured to measure a resistance therebetween.