Sputtering Target SiO2 Quartz Crystal Structure
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Solution Overview
Problem
Sputtering targets with added SiO2 experience micro cracks and increased particle generation during the sputtering process, leading to longer burn-in times, which hinder the production of high-quality magnetic recording films for hard disk drives.
Innovation Solution
Incorporating quartz as the raw material for SiO2 in the sputtering target, which inhibits the formation of cristobalites, reduces micro cracks, and shortens burn-in time by maintaining target density and preventing particle generation, while allowing for higher SiO2 content per unit volume.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If SiO2 is added to the sputtering target, then magnetic separation of alloy phase is improved, but micro cracks are generated and particle generation increases
Solution Approach 1:
The invention changes the crystal structure parameter of SiO2 from amorphous or cristobalite form to quartz form. This parameter change in the SiO2 crystal structure prevents micro crack formation and particle generation during sputtering, while maintaining the magnetic separation function of SiO2 in the alloy phase.
Solution Approach 2:
The invention creates a composite material system where quartz-crystalline SiO2 is combined with ferromagnetic alloy. The specific crystal structure of quartz provides both the magnetic separation function and the structural stability needed to prevent particle generation during sputtering process.
2Reliability
If SiO2 is added to the sputtering target, then magnetic separation of alloy phase is improved, but burn-in time is extended
Solution Approach 1:
The invention changes the crystal structure parameter of SiO2 to quartz form, which has different thermal and structural properties compared to amorphous or cristobalite SiO2. This parameter change reduces the burn-in time required during sputtering while maintaining the magnetic separation function.
3Object-generated harmful factors
If conventional SiO2 forms are used, then particle generation occurs, but using quartz prevents particle generation and maintains target density
Solution Approach 1:
The invention changes the crystal structure parameter of SiO2 to quartz form, which has higher density and different packing characteristics. This allows for increased SiO2 content per unit volume in the sputtering target while preventing particle generation during the sputtering process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of quartz in sputtering targets results in reduced particle generation, improved recording density, and cost reduction through shorter burn-in times, enhancing the efficiency and quality of magnetic recording films.
Implementation Method 1
a sputtering target capable of inhibiting the formation of cristobalites that cause the generation of particles during sputtering
Implementation Method 2
A magnetic thin film of a magnetic recording medium such as a hard disk is often produced by sputtering a ferromagnetic material sputtering target
Data Source
AI summary
A sputtering target for a magnetic recording film containing SiO2, wherein a peak strength ratio of a (011) plane of quartz relative to a background strength (i.e. quartz peak strength/background strength) in an X-ray diffraction is 1.40 or more. An object of this invention is to obtain a sputtering target for a magnetic recording film capable of inhibiting the formation of cristobalites in the target which cause the generation of particles during sputtering, shortening the burn-in time, magnetically and finely separating the single-domain particles after deposition, and improving the recording density.