Square Planar Transition Metal Complexes as Dopants

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Inorganic dopants used in organic semiconductive materials are disadvantageous due to high diffusion coefficients, volatility, and insufficient reduction potential, affecting the stability and performance of electronic components like OLEDs, and existing organic acceptor compounds fail to provide sufficient conductivity enhancement.

Innovation Solution

The use of square planar transition metal complexes, specifically those with certain structures and compositions, as dopants to enhance the conductivity of organic semiconductive matrix materials by forming stable CT complexes and increasing charge carrier mobility.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If inorganic dopants (e.g., alkali metals, FeCl3) are used to increase conductivity of organic semiconductive materials, then conductivity is improved, but diffusion coefficient increases causing stability deterioration

Engineering Contradiction:
Improveelectrical conductivityVSAvoidmaterial stability
Core Design Contradiction:
Loss of energyVSStability of the object's composition

Solution Approach 1:

The patent changes the chemical nature of the dopant from inorganic to organic square planar transition metal complexes, fundamentally altering the interaction mechanism with the organic matrix. This parameter change enables achieving high conductivity (10^-5 to 10^-3 S/cm) while maintaining material stability, as the organic complexes have lower diffusion coefficients and form stable charge transfer complexes without the harmful effects of inorganic dopants.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention creates a composite doping system where square planar transition metal complexes (containing metals like Pt(II), Pd(II), Ir(III), Rh(III)) are combined with organic semiconductive materials. This composite approach leverages the beneficial electrical properties of metal complexes while maintaining the compatibility and stability of organic materials, resolving the contradiction between conductivity enhancement and stability preservation.

Inventive Principle:
Principle #40Composite materials

2Loss of energy

If inorganic dopants are used to enhance conductivity, then charge carrier number increases, but volatility increases causing contamination of vaporization apparatus

Engineering Contradiction:
Improveelectrical conductivityVSAvoidvaporization contamination
Core Design Contradiction:
Loss of energyVSObject-generated harmful factors

Solution Approach 1:

The patent changes the physical and chemical parameters of the dopant material from inorganic compounds with high volatility to organic metal complexes with appropriate vaporization characteristics. The square planar transition metal complexes can be deposited by vaporization without excessive volatility, eliminating contamination issues while maintaining effective doping capability and achieving conductivities above 10^-5 S/cm.

Inventive Principle:
Principle #35Parameter changes

3Ease of operation

If acceptor-like materials are used as hole injection layer, then charge injection is improved, but reduction potential is insufficient for various applications including OLED

Engineering Contradiction:
Improvecharge injection efficiencyVSAvoidreduction potential
Core Design Contradiction:
Ease of operationVSReliability

Solution Approach 1:

The patent changes the electrochemical parameters of the dopant by using square planar transition metal complexes with appropriately tuned LUMO levels. These complexes exhibit sufficient electron affinity and reduction potentials to function effectively as p-type dopants in OLEDs and other electronic devices, overcoming the limitation of conventional acceptor materials with insufficient reduction potential.

Inventive Principle:
Principle #35Parameter changes

4Quantity of substance

If dopants are released via chemical reactions into the matrix material, then dopant availability is improved, but additional compounds (e.g., atomic hydrogen) are produced affecting layer properties

Engineering Contradiction:
Improvedopant availabilityVSAvoidside reaction products
Core Design Contradiction:
Quantity of substanceVSObject-generated harmful factors

Solution Approach 1:

The patent extracts the harmful chemical reaction step from the doping process. Instead of releasing dopants through chemical reactions that produce unwanted byproducts, the square planar transition metal complexes are directly incorporated into the organic matrix during deposition. This direct incorporation method provides sufficient dopant availability without generating harmful side reaction products that would affect layer properties.

Inventive Principle:
Principle #2Taking out (Extraction)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The square planar transition metal complexes significantly increase the conductivity of charge transport layers and improve charge carrier transfer between contacts and organic layers, achieving conductivities greater than 10−5 S/cm, while maintaining material stability and purity, particularly when used in combination with matrix materials having oxidation potentials above −0.5 V vs. Fc/Fc+.

Implementation Method 1

the compounds used as dopants should lead to sufficiently high reduction potentials without disturbing influences on the matrix material itself and provide an effective elevation of the charge carrier number in the matrix material

Methodology Applied
Scientific EffectCharge transfer complex formation: Chemical Bonding

Data Source

PatentUS9722190B2Use of square planar transition metal complexes as dopant
Publication Date: 2017.08.01 NOVALED GMBH
  • US9722190B2 patent drawing
  • US9722190B2 patent drawing
  • US9722190B2 patent drawing

AI summary

The present invention relates to the use of a square planar transition metal complex as dopant, charge injection layer, electrode material or storage material.