SRAM Bit-Cell Latch Circuit Integration for Shorter Data Paths
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor memory devices face inefficiencies due to the large number of peripheral circuits and straps, which affect array efficiency and increase area cost, while peripheral circuit elements are larger than bit-cell counterparts, leading to reliability and area usage issues.
Innovation Solution
Forming latches and flip-flops within the memory array using bit-cell layout rules, integrating them into SRAM bit-cells to reduce area, increase data propagation speed, and decrease power consumption by shortening data paths and reducing parasitic RC effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If latches and flip-flops are located in peripheral areas outside the bit-cell array, then they can be separately configured, but area cost increases and data propagation speed decreases
Solution Approach 1:
The patent merges the latches and flip-flops with the bit-cell array by forming them using the same bit-cell layout rules within the array structure. This integration eliminates the need for separate peripheral circuit areas and reduces the distance between storage elements and data paths, thereby reducing area cost while increasing data propagation speed.
2Adaptability or versatility
If peripheral circuit elements are used, then they can be independently designed, but they occupy larger area compared to bit-cell counterparts
Solution Approach 1:
The patent makes the bit-cell structure universal by enabling it to serve dual functions: storing data bits and forming latches/flip-flops. By using the same layout rules and transistor configurations for both bit-cells and latches, the design achieves versatility without requiring separate peripheral circuit elements, thereby reducing area occupancy while maintaining design flexibility.
3Ease of manufacture
If latches are formed outside the bit-cell array, then they can be separately fabricated, but power consumption increases due to longer data paths
Solution Approach 1:
The patent combines the fabrication process of latches with the bit-cell array by applying identical layout rules to both. This integration shortens the data paths between storage nodes and reduces the number of interconnect transitions, thereby decreasing power consumption while maintaining fabrication simplicity through a unified manufacturing process.
4Adaptability or versatility
If peripheral circuits are increased to handle memory operations, then functionality is enhanced, but array efficiency decreases
Solution Approach 1:
The patent enhances memory functionality by enabling bit-cells to perform multiple operations (storage, latching, and flip-flop functions) within the same array structure. This eliminates the need for separate peripheral circuits, thereby maintaining high array efficiency while providing enhanced memory functionality through the universal bit-cell design.
Data Source
AI summary
A latch formed from a memory cell includes a clock input terminal configured to receive a clock signal, complementary first and second data terminals, and a latch circuit. The latch circuit has first and second inverters. The first inverter has an input terminal coupled to the first data terminal, and the second inverter has an input terminal coupled to the second data terminal. A first pass gate transistor is coupled between an output terminal of the second inverter and the first data terminal. A second pass gate transistor is coupled between an output terminal of the first inverter and the second data terminal. The first and second pass gate transistors each have a gate terminal coupled to the clock input terminal. The input terminal of the first inverter is not directly connected to the output terminal of the second inverter, and the input terminal of the second inverter is not directly connected to the output terminal of the first inverter.