SRAM Transistor Channel Stack Layout for Write Margin
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving improved electric characteristics and increased integration density while maintaining high reliability and performance, particularly in SRAM cells where the complexity and functionality of transistors are limited by the design of pull-down, pull-up, and pass-gate transistors.
Innovation Solution
The semiconductor device incorporates a unique structure with pull-down, pull-up, and pass-gate transistors on a substrate, featuring noncontiguous stacks of semiconductor patterns in the channel regions and varying numbers of semiconductor and gate patterns, allowing for improved channel sizes and transistor performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the complexity and integration density of semiconductor devices are increased to meet demand for high performance and multiple functions, then productivity and functionality are improved, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The channel pattern is segmented into multiple discrete semiconductor patterns arranged in a noncontiguous stack, with gate patterns interposed between adjacent semiconductor patterns. This segmentation allows independent control and optimization of different channel regions, enabling improved integration density while managing complexity through modular structure design.
Solution Approach 2:
The invention transitions from a planar channel structure to a three-dimensional noncontiguous stack configuration, where semiconductor patterns are arranged vertically and horizontally with gate patterns interposed between them. This dimensional change increases integration density by utilizing vertical space while maintaining electrical control through the gate patterns.
2Reliability
If noncontiguous stacks of semiconductor patterns are used in channel regions with gate patterns interposed between them, then transistor performance and channel size are improved, but device complexity increases
Solution Approach 1:
Gate patterns are selectively interposed between specific adjacent semiconductor patterns at local positions within the channel region, rather than uniformly throughout. This allows optimization of transistor performance at critical locations while reducing overall structural complexity. The local application of gate patterns enables precise control of electrical characteristics where needed.
Solution Approach 2:
The gate patterns are nested between the semiconductor patterns in a hierarchical arrangement, with gate patterns positioned at intermediate levels within the stack structure. This nesting configuration allows multiple control elements to be integrated within the channel region without requiring separate external control structures, improving transistor performance while containing complexity within the nested architecture.
Data Source
AI summary
A semiconductor device may include a pull-down transistor and a pull-up transistor disposed on a substrate. Each of the pull-down transistor and the pull-up transistor may include an active pattern disposed on the substrate; two source/drain patterns disposed on the active pattern; a channel pattern interposed between the two source/drain patterns, the channel pattern including semiconductor patterns that are disposed in a noncontiguous stack, such that a semiconductor pattern does not contact an adjacent semiconductor pattern; and a gate electrode crossing the channel pattern in a first direction. There may be more or less semiconductor patterns of the pull-down transistor as compared to semiconductor patterns of the pull-up transistor.