SRAM Leakage Current Reduction via Bypass Switch Potential Equalization

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Solution Overview

Problem

Semiconductor integrated circuits with SRAMs experience increased current consumption due to leakage current during non-access states, requiring a long non-access time to reduce leakage current effectively.

Innovation Solution

Incorporating a switching unit with a bypass switch that connects and disconnects circuit portions between SRAMs, allowing for immediate potential adjustment and reducing leakage current by averaging internal potentials, thereby shortening the non-access period and decreasing current consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If a reverse bias is applied between substrate and source to reduce leakage current, then leakage current is reduced, but a long non-access time is required to obtain the leakage current reduction effect

Engineering Contradiction:
Improveleakage currentVSAvoidnon-access time
Core Design Contradiction:
Loss of energyVSLoss of time

Solution Approach 1:

The bypass switch is activated in advance during the non-access period to pre-establish a potential equalization path between SRAM banks. This preliminary action allows the internal potentials to begin equalizing before the access operation, so that when access occurs, the leakage current is already reduced, eliminating the need for a long non-access waiting period.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The bypass switch acts as an intermediary element that connects the substrate to the source region, creating an alternative path for potential equalization. This intermediary mechanism enables controlled potential adjustment without requiring the long non-access time that would otherwise be needed for natural leakage current reduction.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Loss of energy

If the non-access time is extended to reduce leakage current, then leakage current reduction effect is achieved, but the circuit operation speed is reduced

Engineering Contradiction:
Improveleakage currentVSAvoidcircuit operation speed
Core Design Contradiction:
Loss of energyVSSpeed

Solution Approach 1:

The bypass switch is activated in advance during the non-access period to pre-establish a potential equalization path between SRAM banks. This preliminary action allows the internal potentials to begin equalizing before the access operation, so that when access occurs, the leakage current is already reduced, eliminating the need for a long non-access waiting period.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The bypass switch provides dynamic control over the potential equalization process. By selectively activating the bypass path only when needed (during non-access periods), the system can rapidly adjust potentials without permanently altering the circuit structure, thereby maintaining high-speed operation during access periods while reducing leakage during idle periods.

Inventive Principle:
Principle #15Dynamics

3Loss of energy

If the bypass switch connects circuit portions between SRAMs, then potential is averaged and leakage current is reduced, but device complexity increases

Engineering Contradiction:
Improveleakage currentVSAvoidswitching unit
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The potential equalization function is segmented and implemented independently for each SRAM bank through individual bypass switches. This segmentation allows each bank to be controlled separately, enabling fine-grained leakage current reduction without requiring a complex system-wide restructuring. Each bypass switch is a simple, localized addition that provides targeted leakage reduction.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The bypass switch serves multiple functions: it equalizes potentials between SRAM banks, reduces leakage current, and can be controlled based on access patterns. This multi-functionality justifies the added device complexity by providing several benefits from a single structural addition rather than requiring separate mechanisms for each function.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS10622060B2Integrated circuit including a plurality of SRAMs
Publication Date: 2020.04.14 KK TOSHIBA
  • US10622060B2 patent drawing
  • US10622060B2 patent drawing
  • US10622060B2 patent drawing

AI summary

According to one embodiment, there is provided an integrated circuit. The integrated circuit includes a plurality of SRAMs including a first SRAM and a second SRAM, and a switching unit that enables switching between an electrically connected state where a first circuit portion on a source side of the first SRAM is electrically connected with a second circuit portion on a source side of the second SRAM and an electrically disconnected state where the first circuit portion is electrically disconnected from the second circuit portion.