SRAM Structure With Segmented Gate Lines For High-Speed Performance
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Solution Overview
Problem
Conventional SRAM structures face challenges in achieving higher performance as electronic speeds increase, necessitating improved design for enhanced performance.
Innovation Solution
The SRAM structure incorporates a specific arrangement of active regions and gate lines on a substrate, with parallel and perpendicular configurations to prevent structural connections, and the use of multiple gate lines and metal lines to optimize transistor placement and functionality, forming a 10T SRAM structure that enhances performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional SRAM structures are used, then the basic memory function is maintained, but the performance is insufficient for high-speed electronic systems
Solution Approach 1:
The SRAM cell is segmented into six distinct active regions (first through sixth active regions) arranged in a specific sequence, with gate lines selectively covering different regions to create independent transistor control. This segmentation allows for optimized transistor placement and independent control of read/write operations, improving overall cell performance while maintaining data storage reliability.
Solution Approach 2:
The patent introduces a two-dimensional arrangement of active regions (first through sixth regions) with gate lines extending in perpendicular directions (first gate line with parts perpendicular and parallel to active regions, second gate line similarly configured). This dimensional arrangement optimizes the spatial distribution of transistors and improves signal routing efficiency for high-speed operation.
2Productivity
If the number of transistors is increased to 10T for higher performance, then the performance increases, but the device complexity increases
Solution Approach 1:
Multiple gate lines (first gate line with first, second, and third parts; second gate line with fourth, fifth, and sixth parts) are merged to control different transistor groups simultaneously. The gate lines are positioned to cover multiple active regions, allowing unified control structures that manage the complexity of 10 transistors while enabling high-performance operation through coordinated control.
Solution Approach 2:
The gate lines serve multiple functions: the first gate line controls transistors in the first, second, and fourth active regions, while the second gate line controls transistors in the second, third, and fourth active regions. This multi-functionality reduces the need for separate control structures for each transistor, simplifying the overall device complexity while maintaining 10T performance.
Data Source
AI summary
An SRAM structure includes a substrate. A first active region, a second active region, a third active region and a fourth active region are disposed on the substrate. A first gate structure includes a first part, a second part and a third part disposed on the substrate. The first part and the third part are perpendicular to the first active region. The second part is parallel to the first active region. The first part covers the first active region, the second active region and the fourth active region. The third part covers the fourth active region. The second part is disposed on an insulating region between the second active region and the fourth active region, and the second part contacts the first part and the third part.