SRAM Testability Circuit with Read-Write Path Decoupling

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Solution Overview

Problem

The existing SRAM designs face challenges in fault diagnosis due to the lack of effective testability in the external control circuit area, making it difficult to locate and diagnose faults, which increases the complexity and time required for fault determination.

Innovation Solution

The proposed design includes a fault diagnosis logic control module and a read/write path decoupling circuit that allows for separate detection modes of the write and read paths, enabling the SRAM to function as a dual-port memory cell, improving storage density and fault diagnosis efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Difficulty of detecting and measuring

If the external control circuit area uses a regular layout like the memory cell area, then fault location becomes easier, but the circuit functionality and density are compromised

Engineering Contradiction:
Improvefault location difficultyVSAvoidcircuit functionality
Core Design Contradiction:
Difficulty of detecting and measuringVSAdaptability or versatility

Solution Approach 1:

The external control circuit area is segmented into multiple functional blocks (read path circuit, write path circuit, sense amplifier, etc.), and each block is assigned a unique identification code. This segmentation allows faults to be localized to specific blocks while maintaining the irregular layout required for proper circuit functionality.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

An intermediary identification code system is introduced between the physical circuit layout and the fault diagnosis process. The identification codes act as mediators that map irregular physical locations to diagnosable logical units, enabling fault location without requiring a regular physical layout.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Quantity of substance

If the read and write paths are integrated in a single-port structure, then storage density is improved, but fault diagnosis complexity increases

Engineering Contradiction:
Improvestorage densityVSAvoidfault diagnosis complexity
Core Design Contradiction:
Quantity of substanceVSDevice complexity

Solution Approach 1:

The integrated read and write paths are segmented into distinct functional blocks, each with unique identification codes. The read path, write path, sense amplifier, and other components are separately identified, allowing faults to be diagnosed without the complexity of analyzing the entire integrated system.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different local regions of the circuit are given different identification characteristics. Each functional block (read path, write path, sense amplifier) has its own identification code, enabling localized fault diagnosis while maintaining the overall integrated single-port structure for high storage density.

Inventive Principle:
Principle #3Local quality

3Difficulty of detecting and measuring

If separate read and write paths are used with dual-port structure, then fault diagnosis becomes easier, but storage density decreases

Engineering Contradiction:
Improvefault diagnosis easeVSAvoidstorage density
Core Design Contradiction:
Difficulty of detecting and measuringVSQuantity of substance

Solution Approach 1:

The single-port memory cell structure is given multi-functionality to perform both read and write operations. By adding the identification code system and control logic, the same physical path can be universally used for both reading and writing, achieving fault diagnosis capability without requiring separate dual-port structures.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The read path and write path functionalities are merged into a single integrated path structure. The identification code system merges the diagnostic capabilities of separate paths with the space efficiency of a single path, allowing fault diagnosis while maintaining high storage density through the combined structure.

Inventive Principle:
Principle #5Merging (Combining)

4Reliability

If comprehensive test circuits are added to the external control circuit area, then fault diagnosis capability is improved, but circuit complexity and area increase

Engineering Contradiction:
Improvefault diagnosis capabilityVSAvoidcircuit complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The complex test circuit functionality is extracted from the main operational circuits and implemented through a separate identification code system. Rather than adding comprehensive test circuits to the read/write paths, the patent extracts the diagnostic function into a lightweight coding and comparison system that works with the existing circuit structure.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

Instead of adding physical test circuits that copy the functionality of the main circuits, the patent uses a logical copy approach through identification codes. The codes represent the structural information of the circuit blocks, enabling diagnosis through code comparison rather than through physical test circuit copies.

Inventive Principle:
Principle #26Copying

Data Source

PatentUS12260924B2Testability circuit and read and write path decoupling circuit of SRAM
Publication Date: 2025.03.25 SHANGHAI HUALI INTEGRATED CIRCUIT CORP
  • US12260924B2 patent drawing
  • US12260924B2 patent drawing
  • US12260924B2 patent drawing

AI summary

The present application discloses a design for testability circuit of an SRAM. In a write path circuit detection mode of a fault diagnosis logic control module, a write path circuit is in an on state, a write data bit multiplexer is in a selected state, a read data bit multiplexer is in a deselected state, a read path circuit is in an on state, and a memory cell is in a selected state; in a read path circuit detection mode, the write path circuit is in an off state, the write data bit multiplexer is in a selected state, the read data bit multiplexer is in a deselected state, the read path circuit is in an on state, and the memory cell is in a deselected state. A bit line signal end is connected to a test signal outputted by a signal generation circuit.