SRAM Voltage Control Unit for Low-Voltage Data Transfer

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Solution Overview

Problem

As semiconductor integrated circuits (ICs) shrink and become more complex, decreasing operating voltages affect their performance, particularly in static random access memory (SRAM) devices, where existing technologies struggle to maintain efficient data storage and retrieval due to voltage limitations.

Innovation Solution

The implementation of a voltage control unit within the SRAM memory cell array that adjusts and controls voltage signals through boosted voltage levels and timing units to enhance the driving strength of p-type transistors, enabling faster data transfer and improved operational reliability at lower voltages.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If operating voltage is decreased to enable smaller ICs, then IC size is reduced, but SRAM performance degrades

Engineering Contradiction:

ImproveIC sizeVSAvoidSRAM performance

Core Design Contradiction:

Volume of moving objectVSReliability

Solution Approach 1:

The patent applies parameter changes by dynamically adjusting the voltage level applied to the memory cell based on the operation type (read or write). During write operations, a first voltage level is applied to ensure proper data storage, while during read operations, a second voltage level is applied to maintain read performance. This dynamic parameter adjustment allows the SRAM to maintain reliable operation across different voltage conditions while enabling smaller IC designs.

Inventive Principle:

Principle #35Parameter changes

2Speed

If voltage control unit is added to enhance driving strength, then data transfer rate is improved, but device complexity increases

Engineering Contradiction:

Improvedata transfer rateVSAvoiddevice complexity

Core Design Contradiction:

SpeedVSDevice complexity

Solution Approach 1:

The patent implements dynamics by making the voltage control unit adjustable and adaptable to different operational requirements. The voltage control unit can dynamically change the voltage level applied to the memory cell based on whether a read or write operation is being performed. This dynamic adjustment capability enhances the driving strength and data transfer rate without requiring a completely fixed complex structure, as the same unit adapts its behavior based on operational mode.

Inventive Principle:

Principle #15Dynamics

Solution Approach 2:

The voltage control unit is designed to perform multiple functions: it controls voltage during write operations, controls voltage during read operations, and adapts to different operational modes. This multi-functionality reduces the need for separate dedicated circuits for each operation, thereby limiting the increase in device complexity while still achieving improved data transfer rates through enhanced driving strength.

Inventive Principle:

Principle #6Universality (Multi-functionality)

Data Source

PatentUS10431295B2Static random access memory and method of controlling the same

Publication Date: 2019.10.01 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A static random access memory (SRAM) that includes a memory cell comprising at least two p-type pass gates. The SRAM also includes a first data line connected to the memory cell, a second data line connected to the memory cell and a voltage control unit connected to the first data line, wherein the voltage control unit is configured to control the memory cell.