SSD Data Destruction via Control Gate Dielectric Breakdown
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Solution Overview
Problem
Current methods for disposing of used solid-state drives (SSDs) lack effective solutions for preventing data leakage, as existing devices are inefficient, costly, and uncertain in ensuring complete data destruction, posing risks of information exposure.
Innovation Solution
A security device for SSDs is introduced, featuring a high-voltage pulse generator capable of producing a control gate breakdown voltage (60 V to 240 V) to irreversibly destroy the dielectric layer of flash memory cells, allowing users to directly and personally ensure unrecoverable data destruction through a user-operated switch and memory controller.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a crusher is used to destroy the SSD, then the original form of the disk is destroyed, but it takes at least 10 seconds to process each one and requires sorting and separating destroyed scraps
Solution Approach 1:
The patent replaces mechanical destruction methods (crusher, puncher) with an electrical method. A high-voltage pulse generator applies a breakdown voltage to the flash memory chip, causing irreversible damage to the dielectric layer through electrical breakdown. This substitution eliminates the need for mechanical crushing while achieving complete data destruction in a fraction of the time required for mechanical methods.
Solution Approach 2:
The patent changes the physical parameter applied to the flash memory from mechanical force to electrical voltage. By applying a high-voltage pulse (breakdown voltage) to the control gate of the flash memory cell, the dielectric layer undergoes electrical breakdown, transforming its structural integrity irreversibly. This parameter change enables rapid data destruction without the time-consuming mechanical processing and sorting required by crushers.
2Reliability
If a degausser is used to destroy data, then recorded data is destroyed, but it only destroys recoded data rather than the original form of the disk and is not applicable to SSD
Solution Approach 1:
The patent replaces the magnetic field-based degausser method with an electrical method specific to flash memory architecture. By applying a high-voltage pulse directly to the flash memory chip's control gate, the method destroys the dielectric layer that holds data, making it effective for SSDs while degaussers remain ineffective against non-magnetic flash memory storage.
Solution Approach 2:
The patent changes the destruction mechanism from magnetic field disruption to electrical breakdown. The high-voltage pulse causes dielectric breakdown in the flash memory's control gate, permanently damaging the storage structure. This parameter change makes the method specifically adaptable to flash memory devices while rendering magnetic-based methods like degaussing ineffective.
3Device complexity
If outsourcing processing is used to destroy SSD data, then separate equipment rental or purchase is avoided, but processing status confirmation is difficult and 100% destruction cannot be ensured
Solution Approach 1:
The patent extracts the data destruction function from external outsourcing services and integrates it directly into the SSD device itself. The high-voltage pulse generator and control circuitry are built into the SSD, allowing the user to perform complete data destruction locally without relying on external processors. This extraction eliminates the need for equipment rental while ensuring verified destruction through direct user operation.
Solution Approach 2:
The patent enables the SSD to serve itself by providing an integrated high-voltage pulse generator and control switch within the device. The user can directly operate the switch to apply the breakdown voltage to the flash memory chip, performing self-service data destruction without outsourcing. This self-service capability ensures complete and verifiable data destruction while eliminating equipment rental costs and outsourcing risks.
4Reliability
If a puncher is used to destroy the hard disk, then a hole is drilled to destroy the original form, but it is inappropriate for punching the flash memory packaged in the SSD
Solution Approach 1:
The patent replaces the mechanical puncher method with an electrical method. Instead of physically drilling holes through the flash memory chip, a high-voltage pulse is applied to the control gate, causing dielectric breakdown and irreversible damage to the storage structure. This substitution maintains reliable data destruction while adapting to the delicate flash memory packaging that cannot withstand mechanical punching.
Solution Approach 2:
The patent changes the destruction mechanism from mechanical force (punching) to electrical stress (high-voltage pulse). The electrical breakdown of the dielectric layer occurs without physical contact or mechanical stress, making the method compatible with the fragile flash memory chip structure while still achieving complete and irreversible data destruction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables users to securely and efficiently destroy SSD data without outsourcing, saving time and expense, and fundamentally preventing information leakage by ensuring complete data irreversibility.
Implementation Method 1
a high-voltage pulse generator generating and outputting a control gate breakdown voltage (a high-voltage pulse ranging DC 60 V to 240 V) capable of destroying a dielectric layer of a control gate of a flash memory cell
Data Source
AI summary
Disclosed is a security device for preventing leakage of data information in solid-state drive. The present invention provides the security device for preventing leakage of data information in solid-state drive (SSD), the device enabling a user to electrically destroy flash memory personally to prevent leakage of data stored in the SSD, which is used and is to be waste-processed.