SSD Parity Mode Switching for QLC Data Retention

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Solution Overview

Problem

Portable SSDs with Quad-Level Cell (QLC) technology face high read errors and reduced data retention reliability due to inactivity, as firmware policies like Patrol Read and Random Interval Neighbor Check become less effective when powered off for extended periods, and data retention is compromised.

Innovation Solution

A method and device that dynamically adjust Write Amplification Factor (WAF) and fill factor thresholds based on current parity mode values to optimize data storage, increasing parity size and reducing errors by dynamically selecting higher parity modes when necessary.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If QLC technology is used to increase storage capacity, then storage density is improved, but data retention reliability deteriorates

Engineering Contradiction:
Improvestorage capacityVSAvoiddata retention reliability
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The patent dynamically changes the code rate parameter based on storage fill factor and write amplification factor. When fill factor exceeds a threshold or WAF indicates high write activity, the system transitions from lower code rate (higher capacity) to higher code rate (lower capacity but higher reliability), thereby maintaining data retention reliability while utilizing QLC technology's high storage capacity

Inventive Principle:
Principle #35Parameter changes

2Use of energy by moving object

If the storage device is powered off for extended periods to save energy, then energy consumption is reduced, but error correction effectiveness deteriorates

Engineering Contradiction:
Improveenergy consumptionVSAvoiderror correction effectiveness
Core Design Contradiction:
Use of energy by moving objectVSReliability

Solution Approach 1:

The patent applies preliminary action by proactively increasing the code rate (adding more parity bits) before data degradation occurs during extended idle periods. By detecting high write amplification factors or high fill factors that precede potential data retention issues, the system preemptively enhances error correction capability, ensuring data integrity even when the device remains powered off for long periods without patrol read operations

Inventive Principle:
Principle #10Preliminary action

3Reliability

If higher parity mode is used to reduce read errors, then data retention reliability is improved, but storage efficiency deteriorates

Engineering Contradiction:
Improvedata retention reliabilityVSAvoidstorage efficiency
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent implements dynamics by making the code rate adjustable and adaptive rather than fixed. The system continuously monitors fill factor and write amplification factor, and dynamically adjusts the code rate accordingly. This allows the storage device to optimize between reliability and efficiency in real-time, using higher parity modes only when necessary based on actual data conditions and write patterns

Inventive Principle:
Principle #15Dynamics

Data Source

PatentEP4700580A1Method for writing data to storage with variable code rate-based on storage usage and condition
Publication Date: 2026.02.25 SAMSUNG ELECTRONICS CO LTD
  • EP4700580A1 patent drawingFigure 1a
  • EP4700580A1 patent drawingFigure 1b
  • EP4700580A1 patent drawingFigure 1c~1d

AI summary

The present disclosure provides storage device and method for writing data in the storage device. The method for writing data in a storage device includes determining, by the storage device, a Write Amplification Factor (WAF) value and a fill factor value associated with the storage device in response to a write request, fetching, by the storage device, a current parity mode value of the storage device, determining, by the storage device, a WAF threshold and a fill factor threshold associated with the current parity mode value, determining, by the storage device, whether to change the current parity mode value to a higher parity mode value of a plurality of parity mode values based on the WAF threshold, the WAF value, the fill factor threshold, and the fill factor value, and writing, by the storage device, data in a storage area of the storage device based on results of the determining.