Solid State Lighting Cellular Arrays for Emission Power

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Solution Overview

Problem

Conventional solid-state lighting (SSL) devices, such as LEDs, have limited emission power output per unit surface area due to the limited surface area of planar N-type and P-type GaN materials, which restricts the number of multiple quantum wells that can be formed, thereby limiting illumination efficiency.

Innovation Solution

The formation of three-dimensional wells in the semiconductor material with varying crystal plane orientations and etching conditions to increase the interfacial area for forming active regions with higher multiple quantum well density, allowing for increased emission power output per unit area.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If planar N-type and P-type GaN materials are used, then the device structure is simple and easy to manufacture, but the emission power output per unit surface area is limited

Engineering Contradiction:
Improveease of manufactureVSAvoidemission power output per unit surface area
Core Design Contradiction:
Ease of manufactureVSPower

Solution Approach 1:

The patent transitions from two-dimensional planar GaN material structures to three-dimensional cellular array structures with vertical walls and multiple crystal plane orientations. This dimensional change increases the interfacial area and surface area available for forming multiple quantum wells, thereby increasing the emission power output per unit surface area while maintaining manufacturability through epitaxial growth techniques

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent employs GaN material structures with curved surfaces including vertical walls, slanted walls, and rounded corners formed through selective etching processes. These curved and multi-oriented surfaces increase the total interfacial area compared to planar structures, enabling higher multiple quantum well density and improved emission power output

Inventive Principle:
Principle #14Spheroidality (Curvature)

2Power

If the surface area of GaN materials is increased, then the emission power output per unit surface area increases, but the device complexity increases

Engineering Contradiction:
Improveemission power output per unit surface areaVSAvoiddevice complexity
Core Design Contradiction:
PowerVSDevice complexity

Solution Approach 1:

The patent divides the GaN material structure into multiple discrete cellular units arranged in arrays, with each cell containing vertical walls, slanted walls, and rounded corners. This segmentation creates numerous interfacial surfaces within a compact footprint, increasing the effective area for multiple quantum wells without requiring a large overall device area, thus balancing power output with device complexity

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent creates nested cellular structures where vertical walls are surrounded by slanted walls, which are in turn surrounded by rounded corners. This nesting arrangement maximizes the interfacial area within a limited space, allowing high multiple quantum well density without proportionally increasing device complexity

Inventive Principle:
Principle #7Nested doll (Nesting)

Data Source

PatentUS9041005B2Solid state lighting devices with cellular arrays and associated methods of manufacturing
Publication Date: 2015.05.26 MICRON TECHNOLOGY INC
  • US9041005B2 patent drawing
  • US9041005B2 patent drawing
  • US9041005B2 patent drawing

AI summary

Solid state lighting (“SSL”) devices with cellular arrays and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode includes a semiconductor material having a first surface and a second surface opposite the first surface. The semiconductor material has an aperture extending into the semiconductor material from the first surface. The light emitting diode also includes an active region in direct contact with the semiconductor material, and at least a portion of the active region is in the aperture of the semiconductor material.