Solid State Photomultiplier Subpixel Buffering

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Solution Overview

Problem

Conventional solid state photomultipliers (SSPMs) experience degraded readout pulse shape response due to increased parasitic capacitance and inductance as the size of the SSPM increases, leading to non-uniform gain and signal response across pixels.

Innovation Solution

The implementation of a silicon photomultiplier array with subpixels coupled to respective buffer amplifiers, allowing for multiplexed buffer amplifiers that can be monitored and adjusted to compensate for temperature and process nonuniformity, and disabled if necessary, thereby improving pulse shape readout without increasing the complexity of readout electronics.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If the size of the SSPM is increased to improve detection capability, then the number of pixels increases, but parasitic capacitance and inductance increase causing degraded pulse shape response

Engineering Contradiction:
Improvenumber of pixelsVSAvoidpulse shape response
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The patent divides each pixel into multiple subpixels (e.g., 2x2 or 2x3 grids) and assigns a dedicated buffer amplifier to each subpixel. This segmentation reduces the capacitance load on each buffer amplifier, maintaining fast rise times and improved pulse shape response while preserving the total detection capability of the larger SSPM array.

Inventive Principle:
Principle #1Segmentation

2Device complexity

If conventional buffer amplifiers are used for each pixel, then the circuit is simple, but the readout pulse shape exhibits slow rise time due to parasitic capacitance

Engineering Contradiction:
Improvebuffer amplifier configurationVSAvoidrise time
Core Design Contradiction:
Device complexityVSSpeed

Solution Approach 1:

Instead of using a single buffer amplifier per pixel, the patent segments each pixel into multiple subpixels, each with its own buffer amplifier. This reduces the effective capacitance seen by each amplifier, enabling faster rise times (e.g., <100 ps) while maintaining a relatively simple overall circuit architecture.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces a hierarchical buffer amplifier structure with first-level buffers at the subpixel level and second-level buffers that aggregate signals from multiple subpixels. This multi-dimensional approach maintains fast response characteristics while managing the complexity of reading out large numbers of subpixels.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Reliability

If buffer amplifiers are added to each subpixel to improve pulse shape, then the number of electronics increases, but the complexity of readout electronics becomes excessive

Engineering Contradiction:
Improvepulse shape responseVSAvoidreadout electronics
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent combines multiple subpixel signals through hierarchical buffering, where first-level buffer amplifiers process individual subpixel signals and second-level buffer amplifiers aggregate these signals. This merging approach maintains the pulse shape benefits of individual subpixel buffering while reducing the total number of independent readout channels required.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent implements a two-level hierarchical buffer structure that adds a temporal and organizational dimension to the readout process. First-level buffers operate at the subpixel level for fast response, while second-level buffers provide signal aggregation and further processing, effectively managing complexity through structured organization rather than simple linear scaling.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

4Reliability

If temperature variations occur, then gain uniformity degrades, but monitoring and adjustment mechanisms are needed

Engineering Contradiction:
Improvegain uniformityVSAvoidmonitoring and adjustment system
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent incorporates monitoring circuitry that tracks the output signals from buffer amplifiers and provides feedback for detecting subpixel failures or performance degradation. This feedback mechanism enables real-time identification of problematic subpixels, allowing for compensation or disablement to maintain gain uniformity across the SSPM array.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The patent enables dynamic adjustment of buffer amplifier parameters (such as gain or bias voltage) in response to monitored conditions. By changing these parameters based on temperature variations or subpixel performance, the system maintains uniform gain across all pixels without requiring complex external calibration systems.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the pulse shape response and maintains uniform gain and signal response across SSPM subpixels, effectively addressing the degradation issues caused by increased parasitic capacitance and inductance, while allowing for continuous monitoring and adjustment to compensate for temperature variations.

Implementation Method 1

The Silicon Photomultiplier (SiPM) is a multipixel array of avalanche photodiodes with a number up to a few thousand independent micropixels

Methodology Applied
Scientific EffectAvalanche multiplication: Avalanche Breakdown

Data Source

PatentUS9851455B2Solid state photomultiplier with improved pulse shape readout
Publication Date: 2017.12.26 GE PRECISION HEALTHCARE LLC
  • US9851455B2 patent drawing
  • US9851455B2 patent drawing
  • US9851455B2 patent drawing

AI summary

Embodiments of a solid state photomultiplier are provided herein. In some embodiments, a solid state photomultiplier may include a plurality of pixels, wherein each pixel of the plurality of pixels comprises a plurality of subpixels; and a first set of buffer amplifiers, wherein each buffer amplifier of the first set of buffer amplifiers is respectively coupled to a subpixel of the plurality of subpixels.