Stabilization Layer for Optoelectronic Component Electrical Isolation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing optoelectronic components face challenges in achieving high mechanical stability while being cost-effectively produced, particularly in maintaining structural integrity without compromising electrical isolation and avoiding potential electrical short circuits.
Innovation Solution
A component design featuring a semiconductor body with a pn-junction active layer, a carrier with through-contacts, and a stabilization layer that is electrically isolated from the semiconductor body and through-contacts, providing mechanical stability and reducing the risk of electrical short circuits through lateral bridging and partial exposure of the stabilization layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If a stabilization layer is added to enhance mechanical stability, then the structural integrity is improved, but the risk of electrical short circuits increases due to potential contact with through-contacts
Solution Approach 1:
An insulating structure is introduced as an intermediary element between the stabilization layer and the through-contacts. This mediator prevents direct electrical contact while allowing the stabilization layer to maintain mechanical stability, thus resolving the contradiction between structural integrity and electrical isolation
Solution Approach 2:
The stabilization layer is laterally separated into multiple segments or regions by the insulating structure. This segmentation prevents continuous electrical pathways between through-contacts while preserving the mechanical stabilization function in each segment
2Reliability
If the stabilization layer is made electrically isolated using an insulating structure, then electrical short circuit risk is reduced, but the device complexity increases
Solution Approach 1:
The insulating structure serves multiple functions simultaneously: it provides electrical isolation between conductive elements, acts as a structural support, and defines lateral boundaries for the stabilization layer. This multi-functionality reduces the need for additional dedicated components, thereby limiting the increase in device complexity
3Reliability
If through-contacts are used for electrical connection, then electrical connectivity is improved, but the risk of electrical short circuits increases due to potential contact with the stabilization layer
Solution Approach 1:
The insulating structure acts as a mediator between the through-contacts and the stabilization layer, allowing electrical connectivity through the through-contacts while preventing harmful electrical short circuits by blocking direct contact between conductive elements
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances mechanical stability and reduces the risk of electrical short circuits, enabling efficient production and operation of optoelectronic components with improved structural integrity and cost-effectiveness.
Implementation Method 1
during operation of the component, the active layer emits electromagnetic radiation, for example, in the visible, ultraviolet or infrared spectral range
Implementation Method 2
during operation of the component, the active layer can absorb electromagnetic radiation and convert it into electrical signals or electrical energy
Implementation Method 3
The layers of the semiconductor body can be applied to a growth substrate in layers by means of an epitaxy method
Data Source
AI summary
A component includes a semiconductor body, a carrier, and a stabilization layer arranged between the semiconductor body and the carrier in the vertical direction. The semiconductor body has a first semiconductor layer facing away from the carrier, a second semiconductor layer facing the carrier, and an active layer arranged between the first semiconductor layer and the second semiconductor layer. The carrier has a first via and a second via laterally spaced apart from the first via by means of an intermediate region. The first via is connected to the first semiconductor layer in an electrically conductive manner and the second via is connected to the second semiconductor layer in an electrically conductive manner. The stabilization layer is continuous, overlaps with the vias in a top view, and laterally bridges the intermediate region. The stabilization layer is electrically insulated from the vias and from the semiconductor body.