Stabilization Reaction Unit for Halogen Gas Contamination
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor device manufacturing, halogen-containing gases react with stainless steel components in gas supply devices, leading to metal contamination of processing chambers and wafers, resulting in decreased production yield and increased costs due to the need for inefficient processes like using dummy wafers or forming scattering prevention films.
Innovation Solution
A processing apparatus with a stabilization reaction unit that applies light energy, heat energy, or collision energy to halogen-containing gases to stabilize metal-halogen compounds, which are then trapped, preventing metal contamination by converting them into lower vapor pressure, solid forms that do not adhere to the chamber or wafer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If halogen-containing gases are supplied through stainless steel gas supply lines, then the gas supply device can be made with high corrosion resistance, but metal-halogen compounds are generated that cause metal contamination of the processing chamber and wafer
Solution Approach 1:
A stabilizer is introduced as an intermediary substance into the gas supply line downstream of the metallic portion. The stabilizer reacts with metal-halogen compounds to form stable complexes that have low vapor pressure and do not contaminate the processing chamber or wafer. This intermediary approach allows the metallic gas supply line to be used while preventing the harmful effects of metal contamination.
Solution Approach 2:
The harmful metal-halogen compounds are extracted from the gas stream by introducing the stabilizer, which selectively binds to these compounds and removes them from the gas phase before they can reach the processing chamber. This extraction process separates the harmful substances from the useful halogen-containing gas.
2Object-affected harmful factors
If dummy wafers or scattering prevention films are used to prevent metal contamination, then the processing chamber and wafer are protected from metal contamination, but the throughput decreases and processing cost increases
Solution Approach 1:
The stabilizer is introduced into the gas supply line before the gas reaches the processing chamber, performing a preliminary protective action. This prevents metal-halogen compounds from forming or accumulating in the processing chamber in the first place, eliminating the need for subsequent corrective actions like using dummy wafers or forming scattering prevention films.
Solution Approach 2:
The stabilizer continuously and automatically neutralizes metal-halogen compounds as they form in the gas supply line, providing self-service protection without requiring external intervention such as dummy wafers or additional processing steps. This self-service mechanism maintains protection while preserving throughput.
3Speed
If the gas pressure in the gas exhaust line creates a low vacuum region, then gas flow velocity increases at the central axis, but gas diffuses toward the processing chamber along the pipe wall where flow velocity is zero, causing metal contamination
Solution Approach 1:
The stabilizer is introduced at a specific location in the gas supply line where metal-halogen compounds are most likely to form or where gas flow conditions favor their presence. This localized treatment ensures that the stabilizer is present exactly where needed to prevent contamination, without affecting the overall gas flow dynamics in the exhaust line.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents metal contamination of processing chambers and wafers by stabilizing and trapping metal-halogen compounds, enhancing production yield and reducing processing costs by eliminating the need for non-productive processes.
Implementation Method 1
a stabilizer which reacts with a metal-halogen compound generated in the gas supply line
Implementation Method 2
a stabilization reaction unit which has an energy generator for supplying light energy or heat energy to the corrosive gas
Implementation Method 3
or has an obstacle configured to apply a collision energy to the corrosive gas that has passed through the metallic part of the gas supply passage
Implementation Method 4
a trapping unit which traps the compound stabilized in the stabilization reaction unit
Data Source
AI summary
A processing apparatus includes a gas supply passage for supplying a corrosive gas having a halogen, a part of the passage being made of a metal; a stabilization reaction unit which has an energy generator for supplying light energy or heat energy to the corrosive gas that has passed through the metallic part of the gas supply passage and/or has an obstacle configured to apply a collision energy to the corrosive gas that has passed through the metallic part of the gas supply passage, the collision energy being generated from a collision between the obstacle and said corrosive gas. A reaction for stabilizing a compound containing the metal and the halogen contained in the corrosive gas takes place by means of at least one of the light energy, heat energy, and collision energy; and a trapping unit which traps the compound stabilized in the stabilization reaction unit.