Stabilizing Silicon Oxide Insulating Layers in Semiconductor Devices
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Solution Overview
Problem
The instability of metal oxide semiconductor layers in thin film transistors due to silicon dangling bonds at the interface with insulating layers, which absorb oxygen and alter the semiconductor layer's structure, leading to performance issues in semiconductor devices.
Innovation Solution
A method of stabilizing the insulating layer by filling silicon dangling bonds with oxygen atoms or other filling atoms through plasma treatment and annealing, preventing the capture of oxygen from the metal oxide semiconductor layer and enhancing the stability of the semiconductor device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a silicon oxide insulating layer is formed adjacent to the metal oxide semiconductor layer, then the device structure is complete and functional, but silicon dangling bonds at the interface absorb oxygen from the metal oxide semiconductor layer, causing structural changes and performance instability
Solution Approach 1:
The patent applies preliminary action by performing stabilization treatment on the silicon oxide insulating layer before it contacts the metal oxide semiconductor layer. This treatment fills silicon dangling bonds with oxygen atoms or hydrogen atoms in advance, preventing subsequent oxygen absorption from the semiconductor layer and thus maintaining its structural stability and device performance consistency
Solution Approach 2:
The patent introduces an intermediary substance (filling atoms such as oxygen or hydrogen) that mediates between the silicon oxide insulating layer and the metal oxide semiconductor layer. These filling atoms occupy silicon dangling bonds, acting as a buffer that prevents direct oxygen transfer from the semiconductor layer to the insulating layer, thereby protecting the semiconductor layer's structural integrity
2Ease of manufacture
If amorphous silicon is used to manufacture the semiconductor layer, then the manufacturing process is simple, but the mobility is only about 0.5 cm2/V.S, which cannot meet the requirements for 120 Hz drive frequency in large-sized liquid crystal displays
Solution Approach 1:
The patent applies parameter changes by transitioning from amorphous silicon to metal oxide materials for the semiconductor layer. This material substitution fundamentally changes the electrical properties, achieving carrier mobility exceeding 1 cm2/V.S while maintaining compatibility with existing thin film transistor manufacturing processes, thus meeting the 120 Hz drive frequency requirements
3Productivity
If the silicon oxide film is not stabilized, then the manufacturing process is short and simple, but the silicon dangling bonds cause oxygen absorption leading to performance degradation of the thin film transistor
Solution Approach 1:
The patent implements preliminary action by incorporating stabilization treatment as a mandatory step in the insulating layer formation process. This treatment, performed before device assembly, fills silicon dangling bonds with oxygen or hydrogen atoms, preventing subsequent performance degradation from oxygen absorption and ensuring long-term device reliability without significantly extending the manufacturing cycle
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the stability of the semiconductor device by preventing structural changes in the metal oxide semiconductor layer, ensuring consistent performance and meeting the mobility requirements for modern semiconductor devices.
Implementation Method 1
stabilizing the first silicon oxide film by filling a silicon dangling bond in the first silicon oxide film with a filling atom capable of being bonded to the silicon dangling bond therein
Implementation Method 2
the step of stabilizing the first silicon oxide film includes a step of performing plasma treatment on the first silicon oxide film using oxygen-containing plasma
Implementation Method 3
the step of stabilizing the first silicon oxide film further includes a step of performing annealing treatment under an oxidizing atmosphere after the plasma treatment
Data Source
AI summary
Provided are a semiconductor device and a method for manufacturing the same. The semiconductor device comprises an insulating layer and a metal oxide semiconductor layer which are adjacent to each other, and the insulating layer is formed by steps of: forming a first silicon oxide film; and stabilizing the first silicon oxide film by filling a silicon dangling bond therein with a filling atom capable of being bonded to the silicon dangling bond.