Stabilized Copper Nickel Etching Solution
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Solution Overview
Problem
Existing etching solutions for copper and nickel layers in semiconductor technology suffer from catalytic decomposition of hydrogen peroxide, leading to unstable etch rates and contamination issues, requiring multiple process steps and increased accuracy demands.
Innovation Solution
A stabilized etching solution comprising nitric acid, hydrogen peroxide, citric acid, and water, with specific weight ratios, that prevents hydrogen peroxide decomposition and maintains consistent etching rates even with metal ion accumulation, allowing for single-step etching of copper and nickel layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If HNO3/H2O2 mixture is used to etch Cu and Ni layers, then etching capability is achieved, but catalytic decomposition of H2O2 occurs leading to unstable etch rates
Solution Approach 1:
A stabilizing agent is introduced as an intermediary substance that mediates between the HNO3/H2O2 etching mixture and the metal ions. This stabilizing agent prevents the catalytic decomposition of H2O2 by metal ions while allowing the etching reaction to proceed, thus maintaining stable etch rates throughout the process.
Solution Approach 2:
The composition parameters of the etching solution are modified by adding specific stabilizing agents and adjusting the ratios of HNO3, H2O2, and other components. This parameter change transforms the unstable H2O2-based etching solution into a stable formulation that maintains consistent etching performance over time.
2Manufacturing precision
If individual etching solutions are used for Cu and Ni layers, then selective etching is achieved, but number of process steps increases
Solution Approach 1:
The etching solution is designed with multi-functional capabilities to etch both Cu and Ni layers selectively in a single process step. The solution contains a eutectic mixture of halogen-containing compounds and sulfur-containing compounds that provide different etching mechanisms for different metals, enabling one solution to perform multiple etching functions.
Solution Approach 2:
Multiple etching functions for different metal layers are merged into a single etching solution. The solution combines halogen-containing compounds for Cu etching and sulfur-containing compounds for Ni etching, allowing simultaneous selective etching of Cu and Ni layers in one process step rather than requiring separate etching steps.
3Object-affected harmful factors
If H2O2 is used as etching agent, then environmental compatibility is improved, but catalytic decomposition by metal ions reduces effectiveness
Solution Approach 1:
A stabilizing agent serves as an intermediary that protects H2O2 from catalytic decomposition by metal ions. This allows H2O2 to maintain its environmentally friendly oxidizing properties while preventing the loss of etching effectiveness that would otherwise occur through decomposition.
Solution Approach 2:
The stabilizing agent converts the potentially harmful interaction between metal ions and H2O2 (which causes decomposition) into a beneficial situation where the etching process remains consistent and reliable throughout the process, maintaining both environmental compatibility and etching effectiveness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables high-speed, stable etching of copper and nickel layers over extended periods and elevated temperatures, reducing process complexity and material costs, while minimizing surface contamination and particle redeposition.
Implementation Method 1
etching solutions containing nitric acid (HNO3), hydrogen peroxide (H2O2), citric acid and water
Implementation Method 2
the entry of Cu and/or Ni ions into the solution causes a catalytic decomposition of the hydrogen peroxide
Implementation Method 3
the entry of Cu and/or Ni ions into the solution causes a catalytic decomposition of the hydrogen peroxide contained in the solution
Data Source
AI summary
The invention relates to novel solutions that are stable in storage with the aid of which, in semiconductor technology, specific metallization layers made of copper and also Cu/Ni layers can be etched. The novel etching solutions make it possible to etch and structure pure copper metallizations, layers made of copper/nickel alloys and also couple and nickel layers lying one atop the other. The solutions contain nitric acid, hydrogen peroxide, citric acid and water.