Stack Package Chip Selection via Voltage Dropping Units

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Solution Overview

Problem

In stack packages with through-silicon vias, chip selection is hindered by identical vertical positions of chip selection pads, leading to increased processing costs and structural reliability issues due to wire bonding, which complicates the administration of chip selection processes.

Innovation Solution

A stack package configuration where first and second voltage dropping units, connected by separate lines with opposite current flow directions, generate signals for chip selection through diodes and logic gates, allowing for efficient chip selection without the need for redistribution layers or excessive wire bonding.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of operation

If redistribution layers are formed to connect chip selection pads at different vertical positions, then chip selection becomes possible, but processing costs increase and process administration becomes difficult

Engineering Contradiction:
Improvechip selection capabilityVSAvoidredistribution layer patterns
Core Design Contradiction:
Ease of operationVSDevice complexity

Solution Approach 1:

The patent transitions from horizontal redistribution layers to vertical through-silicon via connections. By utilizing the vertical dimension through TSVs, chip selection pads can be connected across different chips without requiring complex planar redistribution patterns, thus simplifying the overall structure while maintaining selection capability.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The through-silicon vias serve multiple functions: they provide electrical connections for power/ground and simultaneously enable chip selection signaling. This multi-functionality eliminates the need for separate redistribution layers dedicated solely to chip selection, reducing process complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Ease of operation

If wire bonding is used to connect chip selection pads, then chip selection signals can be applied, but package thickness increases and signal delay occurs

Engineering Contradiction:
Improvechip selection signal applicationVSAvoidwire length
Core Design Contradiction:
Ease of operationVSLength of stationary object

Solution Approach 1:

The patent extracts the chip selection signaling function from the wire bonding process and integrates it directly into the through-silicon via structure. By taking out the need for separate wire bonds for selection signals, the package thickness is reduced and signal paths are shortened.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent merges the chip selection signal transmission path with the existing through-silicon via structure. By combining multiple functions (power/ground connection and selection signaling) into the same vertical pathway, wire bonding is eliminated and package thickness is reduced.

Inventive Principle:
Principle #5Merging (Combining)

3Ease of operation

If wire bonding is used for chip selection, then signals can reach the chips, but structural reliability degrades

Engineering Contradiction:
Improvechip selection signalingVSAvoidpackage structural reliability
Core Design Contradiction:
Ease of operationVSReliability

Solution Approach 1:

The patent combines chip selection signaling with the robust through-silicon via structure, eliminating fragile wire bonds. By merging the selection function into the mechanically stronger TSV infrastructure, both reliability and functionality are improved.

Inventive Principle:
Principle #5Merging (Combining)

4Productivity

If through-silicon vias are used to stack chips, then high density and high performance are achieved, but chip selection becomes difficult due to identical vertical positions of selection pads

Engineering Contradiction:
Improvestorage capacityVSAvoidchip selection
Core Design Contradiction:
ProductivityVSEase of operation

Solution Approach 1:

The patent introduces through-silicon vias as intermediary structures that extend vertically through multiple chips. These TSVs act as mediators that can carry selection signals from a single pad location on one chip to corresponding pad locations on other chips, enabling selection despite identical vertical pad positions.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The through-silicon vias perform multiple functions simultaneously: they provide power/ground connections and serve as pathways for chip selection signals. This multi-functionality enables chip selection capability without requiring additional structures that would compromise the high-density stacking.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach simplifies chip selection operations, reduces package thickness, and enhances structural reliability by eliminating the need for redistribution layers and wire bonding, while maintaining high performance and miniaturization.

Implementation Method 1

first voltage dropping units respectively provided in the plurality of chips, the first voltage dropping units are electrically coupled by a first line; second voltage dropping units respectively provided in the plurality of chips the second dropping units are electrically coupled by a second line

Methodology Applied
Scientific EffectVoltage drop: Electrical Resistance

Data Source

PatentUS8810309B2Stack package and method for selecting chip in stack package
Publication Date: 2014.08.19 SK HYNIX INC
  • US8810309B2 patent drawing
  • US8810309B2 patent drawing
  • US8810309B2 patent drawing

AI summary

A stack package having a plurality of stacked chips includes first voltage dropping units respectively formed in the plurality of chips, the first voltage dropping units are electrically coupled by a first line; second voltage dropping units respectively formed in the plurality of chips, the second dropping units are electrically coupled by a second line; first signal generation units respectively formed in the plurality of chips, each of the first signal generation units is connected to an output node of the first voltage dropping units, respectively; and second signal generation units respectively formed in the plurality of chips, each of the second signal generation units is connected to an input node of the second voltage dropping units, respectively.