Stackable Power Semiconductor Switch with Bond Wires for Fault Bridging
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Solution Overview
Problem
Industry-standard power semiconductor switches with solder-bond technology lack the 'conduct on fail' property, making it difficult to form a low-impedance current path when a faulty component is detected, especially in series connections, which complicates fault detection and bridging in power transmission and distribution systems, and are costly due to the need for complex electronics and pressure-contact components.
Innovation Solution
A circuit unit design where power semiconductor switches are arranged between emitter and collector plates that are electrically conductive and supported via an intermediate component, allowing direct pressure contact between load connections without additional conductors, enabling a 'pseudo-press pack' configuration with controllable power semiconductor chips and freewheeling diodes for fault bridging, and incorporating a bypass switch for fault detection and triggering.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If industry-standard power semiconductor switches with solder-bond technology are used, then the modular design is established as the industrial standard, but the 'conduct on fail' property is lost and complex electronics are required for fault detection and bridging
Solution Approach 1:
A mechanically actuated bypass switch is introduced as an intermediary component that physically creates a low-impedance current path around the power semiconductor switch when triggered. This mechanical bypass switch replaces the need for complex electronic fault detection and bridging circuits, while maintaining the modular design benefits of solder-bond technology.
Solution Approach 2:
The patent replaces complex electronic fault detection and bridging systems with a mechanically actuated bypass switch. The mechanical switch is triggered by detecting voltage level exceedance or voltage gradient changes, substituting electronic complexity with a simpler mechanical activation system that still achieves the 'conduct on fail' property.
2Reliability
If pressure-contacted components are used to achieve 'conduct on fail' property, then the low-impedance current path is available when level fails, but the mechanical effort and production cost are high
Solution Approach 1:
The system is segmented into the power semiconductor switch module and a separate mechanically actuated bypass switch. This segmentation allows the power semiconductor to maintain its standard solder-bond construction without requiring expensive pressure-contacted components, while the bypass switch provides the necessary 'conduct on fail' functionality as a separate, simpler mechanical component.
Solution Approach 2:
The mechanically actuated bypass switch serves as a disposable or replaceable component that provides the 'conduct on fail' property without requiring the power semiconductor switch itself to be expensive pressure-contacted equipment. The bypass switch can be a simpler, more cost-effective mechanical device that activates only when needed.
3Power
If several power semiconductor switches are connected in series, then the required current carrying capacity is achieved, but the fault detection and bridging becomes impossible with previous measurement technology
Solution Approach 1:
The system incorporates feedback mechanisms that detect voltage level exceedance or voltage gradient changes across the series-connected power semiconductor switches. This feedback triggers the mechanical bypass switch to activate, creating a low-impedance current path around the faulty switch. The feedback system enables fault detection in series connections without requiring intermediate circuit discharge, making it suitable for multi-level converter topologies.
Data Source
Figure 1~2
Figure 3~4
Figure 5~6
AI summary
The invention relates to a circuit unit (15) for a converter with a power semiconductor switch (1), which has at least one collector connection (5), at least one emitter connection (4) as load connections and a control connection (6). In said unit, power semiconductor chips (8) arranged in a semiconductor housing (2) are connected to one another via bonding wires (12) for conducting load current. In order to provide said unit and to provide a current path between the load connections (4, 5), which current path can be controlled via the control connection (6), wherein the power semiconductor switch (1) is transferred from its on position, in which a current flow between the load connections (4, 5) in a forward direction is enabled, to its off position, in which a current flow between the load connections (4, 5) is interrupted, or vice versa, which circuit unit can be stacked so as to form a series circuit with identical power semiconductor switches, wherein the load connections are connected directly to one another without any further intermediate conductors, according to the invention, the collector connection(s) (4) and the emitter connection(s) (5) are arranged on opposite sides of the housing (2).