Stackable Semiconductor Die with Peripheral Conductive Vias
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Solution Overview
Problem
Current through-hole via (THV) technology in semiconductor devices limits the placement of additional circuitry within the device and reduces yields due to the need for wider saw streets when vias are located outside the die, restricting the integration of different functionalities and increasing package size.
Innovation Solution
A method for creating stackable semiconductor devices using THVs, where conductive vias are formed through an insulating layer around each semiconductor die, allowing for electrical connection between adjacent dies, and the use of organic materials like benzocyclobutene to accommodate multiple rows of vias, enabling flexible stacking configurations and increased yield without size constraints.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If a via is located within a semiconductor device, then the device can be made compact, but the freedom of having additional circuitry within the semiconductor device is restricted
Solution Approach 1:
The patent divides the via structure into two distinct parts: vias formed within the die (for compactness) and vias formed in the organic material surrounding the die (for additional circuitry). This segmentation allows each via location to serve different purposes, resolving the contradiction between compactness and functionality.
Solution Approach 2:
The patent extends the via formation process into a new dimension by forming vias in the organic material layer that surrounds the die, rather than only within the die itself. This additional spatial dimension provides extra room for circuitry without increasing the die size, thus maintaining compactness while enhancing functionality.
2Adaptability or versatility
If a via is located outside the semiconductor device along the saw street guide, then additional circuitry can be accommodated, but a wider saw street is required which reduces yields
Solution Approach 1:
The patent applies different via formation approaches to different locations: vias within the die use one method, while vias in the surrounding organic material use another method. This local differentiation allows via formation in the organic material region without requiring wider saw streets, thus maintaining high yield while accommodating additional circuitry.
3Device complexity
If traditional THV technology is used, then the structure is simple, but the integration of devices with different functionality within a respective package is limited
Solution Approach 1:
The patent creates a universal via structure that can serve multiple functions: vias within the die provide compact interconnects, while vias in the surrounding organic material enable additional circuitry and different functionality integration. This multi-functional via system resolves the contradiction between structural simplicity and integration capability.
Data Source
AI summary
A semiconductor device has a plurality of similar sized semiconductor die each with a plurality of bond pads formed over a surface of the semiconductor die. An insulating layer is formed around a periphery of each semiconductor die. A plurality of conductive THVs is formed through the insulating layer. A plurality of conductive traces is formed over the surface of the semiconductor die electrically connected between the bond pads and conductive THVs. The semiconductor die are stacked to electrically connect the conductive THVs between adjacent semiconductor die. The stacked semiconductor die are mounted within an integrated cavity of a substrate or leadframe structure. An encapsulant is deposited over the substrate or leadframe structure and the semiconductor die. A thermally conductive lid is formed over a surface of the substrate or leadframe structure. The stacked semiconductor die are attached to the thermally conductive lid.