Stackable Semiconductor Device With Through Contact Blocks
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices with large-area external contact areas on top and underside are not stackable, and they lack efficient cooling mechanisms, especially when stacked, leading to high thermal resistance and limited functionality.
Innovation Solution
A stackable semiconductor device design featuring through contact blocks on the edge sides with externally accessible contact areas on multiple sides, allowing for both parallel and series connections, and incorporating large-area external contacts for enhanced cooling from above and below.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If large-area external contact areas are extended to top and underside of semiconductor device for heat dissipation, then cooling capability is improved, but stackability is lost
Solution Approach 1:
The external contact areas are segmented into two distinct types: through contact blocks on edge sides with contact areas on multiple sides (edge side, top side, underside) for electrical connections, and separate large-area external contacts on top and underside specifically for heat dissipation. This segmentation allows each contact type to fulfill its specific function without interfering with stackability.
Solution Approach 2:
Different regions of the semiconductor device are assigned different contact area characteristics: edge sides have through contact blocks with multi-side contact areas suitable for stacking, while top and underside have large-area external contacts optimized for heat dissipation. This local differentiation resolves the contradiction by giving each region the quality it needs for its specific purpose.
2Adaptability or versatility
If through contact blocks with multi-side contact areas are used for stacking, then stackability is improved, but cooling efficiency is reduced
Solution Approach 1:
The invention merges two previously separate functions into a unified device structure: through contact blocks provide both electrical connectivity for stacking (edge side, top side, underside contact areas) and thermal pathways, while separate large-area external contacts on top and underside provide dedicated heat dissipation. This merging allows the device to achieve both stackability and cooling efficiency simultaneously.
3Adaptability or versatility
If standard housing forms are used for stacking, then device compatibility is improved, but thermal resistance increases
Solution Approach 1:
The through contact blocks extend contact areas into the third dimension (through the housing thickness) with contact areas on edge sides, top sides, and undersides. This dimensional extension allows electrical and thermal connections to pass through the housing structure without increasing lateral footprint, maintaining compatibility with standard housing forms while reducing thermal resistance through direct vertical pathways.
Data Source
AI summary
The stackable semiconductor device includes at least one first electrode on a top side and a large-area second electrode on an underside of a semiconductor chip. The semiconductor chip also includes a control electrode on one of: the top side or the underside. Through contact blocks are arranged on the edge sides of the semiconductor device, the through contact blocks including externally accessible external contact areas. The external contact area each includes at least one edge side contact area, a top side contact area and an underside contact area. At least one large-area external contact is arranged on the underside and/or on the top side of the semiconductor device.