Stacked 2D Semiconductor Layers With Clean Interface Transfer
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Solution Overview
Problem
Conventional methods for forming stacked heterostructures in semiconductor devices often result in residual contamination and material deterioration due to the use of chemical solvents and wet etching processes during the transfer and removal of two-dimensional material layers.
Innovation Solution
A method is described that enables the clean peeling of two-dimensional material building blocks from target substrates without using etchants or solvents, allowing for the fabrication of semiconductor structures with pristine interlayer interfaces through vertical stack-by-stack heterostructure transfer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If chemical solvents and wet etching processes are used during the transfer and removal of two-dimensional material layers, then the transfer process can be completed, but residual contamination and material deterioration occur
Solution Approach 1:
The patent replaces chemical-based transfer methods (solvents and wet etching) with a mechanical approach using a release structure. The release structure physically anchors the two-dimensional material layers during transfer, allowing them to be peeled off the substrate mechanically rather than chemically. This substitution eliminates the need for chemical solvents and etchants, thereby preventing residual contamination and material deterioration while maintaining transfer process feasibility
Solution Approach 2:
The release structure serves as an intermediary element between the substrate and the two-dimensional material layers. It temporarily holds the layers during the transfer process and can be selectively removed afterward. This intermediary mechanism enables clean separation without direct chemical contact between the substrate and the two-dimensional materials, resolving the contradiction between achieving successful transfer and maintaining interface cleanliness
2Ease of operation
If conventional transfer methods are used, then two-dimensional material layers can be moved to target substrates, but residual contamination remains on the layers
Solution Approach 1:
The patent replaces chemical-based transfer methods with a mechanical release structure approach. The release structure physically supports the two-dimensional material layers during transfer, allowing them to be moved to target substrates without chemical solvents. This mechanical substitution maintains material property integrity by avoiding chemical contamination while preserving transfer capability
Solution Approach 2:
The release structure is selectively removed (taken out) after the two-dimensional material layers have been successfully transferred to the target substrate. This extraction of the release structure leaves behind clean, contamination-free layers on the target substrate, resolving the contradiction between achieving successful transfer and maintaining material purity
Data Source
AI summary
A semiconductor structure includes a semiconductor substrate, a plurality of stacked units, a conductive structure, a plurality of dielectrics, a first electrode strip, a second electrode strip, and a plurality of contact structures. The stacked units are stacked up over the semiconductor substrate, and comprises a first passivation layer, a second passivation layer and a channel layer sandwiched between the first passivation layer and the second passivation layer. The conductive structure is disposed on the semiconductor substrate and wrapping around the stacked units. The dielectrics are surrounding the stacked units and separating the stacked units from the conductive structure. The first electrode strip and the second electrode strip are located on two opposing sides of the conductive structure. The contact structures are connecting the channel layer of each of the stacked units to the first electrode strip and the second electrode strip.