Stacked Bulk Acoustic Resonator Package for Wide RF Bandwidth
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Solution Overview
Problem
Current bulk acoustic resonators face challenges in achieving high frequency differences and wide bandwidths required for advanced mobile communication devices, as existing designs often result in limited frequency separation and narrow bandwidths.
Innovation Solution
A bulk acoustic resonator package is designed with multiple resonators stacked between a substrate and a cap, featuring distinct resonant frequencies and antiresonant frequencies, with one resonator closer to the substrate and another closer to the cap, and including a mass addition layer to enhance frequency differences and bandwidth, allowing for a wider pass or stop bandwidth.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple bulk acoustic resonators are disposed between substrate and cap at different positions, then frequency difference and bandwidth are improved, but device complexity increases
Solution Approach 1:
The patent divides the resonator system into multiple independent bulk acoustic resonators (first, second, and third resonators) with distinct resonant frequencies. Each resonator is positioned at different locations between the substrate and cap, allowing independent frequency control. This segmentation enables the system to achieve wide bandwidth (3.3 GHz to 3.8 GHz) and large frequency differences (exceeding 200 MHz) by combining multiple resonators with different resonant characteristics.
Solution Approach 2:
The patent utilizes the spatial dimension between substrate and cap to position resonators at different heights and locations. The first resonator is disposed closer to the substrate, the second resonator closer to the cap, and the third resonator positioned between them. This three-dimensional arrangement allows for frequency differentiation based on positional variations, enabling complex frequency responses without increasing planar footprint.
2Adaptability or versatility
If mass addition layer thickness is increased to enhance frequency difference, then frequency difference and bandwidth are improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent employs mass addition layers with specifically controlled thicknesses to tune the resonant frequencies of the bulk acoustic resonators. The first mass addition layer has a thickness of 100 nm to 500 nm, the second mass addition layer has a thickness of 50 nm to 200 nm, and the third mass addition layer has a thickness of 50 nm to 150 nm. By precisely controlling these thickness parameters, the patent achieves the desired frequency differences (exceeding 200 MHz) and bandwidth (3.3 GHz to 3.8 GHz) while maintaining manufacturability through defined thickness ranges.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design achieves a significant difference in resonant frequencies exceeding 200 MHz and a bandwidth covering 3.3 GHz to 3.8 GHz or higher, optimizing RF signal passage and reducing losses, thereby enhancing the performance of mobile communication devices.
Implementation Method 1
each including a first electrode, a piezoelectric layer, and a second electrode stacked in a direction
Implementation Method 2
first and second bulk acoustic resonators each including a first electrode, a piezoelectric layer, and a second electrode stacked in a direction... forming a bandwidth based on first and second resonant frequencies
Data Source
AI summary
A bulk acoustic resonator package includes a substrate, a cap, and first and second bulk acoustic resonators each including a first electrode, a piezoelectric layer, and a second electrode stacked in a direction in which the substrate and the cap face each other, and disposed between the substrate and the cap, wherein the first and second bulk acoustic resonators form a bandwidth based on first and second resonant frequencies different from each other and first and second antiresonant frequencies different from each other, a difference between the first and second resonant frequencies exceeds 200 MHz, the first bulk acoustic resonator is disposed closer to the substrate than to the cap, and the second bulk acoustic resonator is disposed closer to the cap than to the substrate.