Stacked Semiconductor Bonding With Carbon Barrier Layers

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Solution Overview

Problem

The structural stability and electrical reliability of bonded semiconductor devices are compromised due to the limitations in the bonding process of conductive pads on substrates, which affect the overall performance and durability of the integrated circuits.

Innovation Solution

A semiconductor device is fabricated using carbon-based barrier layers and bonding layers to enhance the structural stability and electrical reliability by employing rapid thermal treatment to bond connection structures on first and second substrates, incorporating graphene as a heater electrode to manage heat and high-entropy alloys for improved bonding.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conductive pads are used for bonding substrates, then electrical connection is achieved, but structural stability at bonding surfaces deteriorates

Engineering Contradiction:
Improveelectrical reliabilityVSAvoidstructural stability
Core Design Contradiction:
ReliabilityVSStability of the object's composition

Solution Approach 1:

The bonding structure uses a composite material system consisting of conductive pads made from high-entropy alloys (combinations of 5 or more elements such as Co, Cr, Fe, Mn, Ni, Mo, W) bonded to copper-based pads. This composite approach combines the electrical conductivity of copper with the high-temperature stability and structural strength of high-entropy alloys, resolving the contradiction between electrical reliability and structural stability.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent changes the material parameters by transitioning from conventional single-metal pads to high-entropy alloy pads with specific compositional parameters (5 or more elements in controlled ratios). This parameter change enables the bonding interface to simultaneously achieve high electrical conductivity and enhanced structural stability under thermal and mechanical stress.

Inventive Principle:
Principle #35Parameter changes

2Ease of manufacture

If conventional bonding processes are used, then manufacturing simplicity is maintained, but bonding reliability deteriorates

Engineering Contradiction:
Improvebonding process simplicityVSAvoidbonding reliability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent applies preliminary actions by forming a specific multi-layer pad structure before the bonding process. The conductive pads are pre-configured with high-entropy alloy compositions and specific geometric parameters (area, thickness) to ensure optimal bonding performance. This preliminary structuring enables reliable bonding while maintaining manufacturing simplicity, as the enhanced reliability is achieved through material design rather than complex process steps.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method provides semiconductor devices with enhanced structural stability and electrical reliability through the use of carbon-based barrier layers and rapid thermal treatment, ensuring stable bonding interfaces and reduced material movement, thereby improving the device's performance and longevity.

Implementation Method 1

a carbon-based first heater electrode disposed on the first connection pad, and a first preliminary bonding layer disposed on the carbon-based first heater electrode

Methodology Applied
Scientific EffectJoule heating: Joule Heating

Implementation Method 2

The first connection structure and the second connection structure may be bonded to each other through a rapid thermal-treatment to couple the first substrate structure and the second substrate structure

Methodology Applied
Scientific EffectRapid thermal treatment: Heat Treatment

Data Source

PatentUS20260005168A1Semiconductor device including bonding of stacked structure parts and method of fabricating the same
Publication Date: 2026.01.01 SK HYNIX INC
  • US20260005168A1 patent drawing
  • US20260005168A1 patent drawing
  • US20260005168A1 patent drawing

AI summary

A semiconductor device according to an embodiment includes a first stacked structure and a second stacked structure that are bonded to each other. The first stacked structure includes a first base body and a first connection structure disposed on a surface over the first base body. The second stacked structure includes a second base body and a second connection structure disposed on a surface over the second base body. Each of the first and second connection structures includes a connection pad, a carbon-based barrier layer disposed on the connection pad, and a bonding layer disposed on the carbon-based barrier layer and coupling the first and second connection structures to each other.