Stacked Capacitor Layout for Equal Capacitance in Semiconductor Structures
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current capacitor structures in semiconductor devices have varying capacitances, leading to increased design complexity.
Innovation Solution
A semiconductor structure design featuring electrode layers with overlapping top-view patterns and dielectric layers, ensuring equal capacitance across capacitors by aligning overlapping regions to have the same top-view area, and contact structures connecting electrode layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If multiple electrode layers are stacked to form multiple capacitors, then the capacitance of the capacitor structure is increased, but the design complexity is increased
Solution Approach 1:
The capacitor structure is segmented into multiple electrode layers (first electrode layer, second electrode layer, third electrode layer) separated by dielectric layers, where each layer pair forms an independent capacitor unit. This segmentation allows the total capacitance to be increased by adding more segments while maintaining manageable design complexity through modular construction.
Solution Approach 2:
The patent transitions from planar capacitor design to three-dimensional stacked design, where electrode layers are arranged vertically above each other with partial overlapping top-view patterns. This dimensional change enables increased capacitance density by utilizing the vertical space, allowing multiple capacitors to occupy a smaller footprint area while maintaining equal capacitance values through controlled overlapping regions.
2Quantity of substance
If multiple capacitors with different capacitances are formed, then the capacitance can be increased, but the design becomes more complex
Solution Approach 1:
The patent applies local quality by ensuring that the overlapping regions of adjacent electrode layers have equal top-view areas. Specifically, the first overlapping region (where first and second electrode layers overlap) and the second overlapping region (where second and third electrode layers overlap) are designed to have equal areas, which guarantees equal capacitance values for each capacitor unit. This localized control of geometric parameters simplifies the design process while achieving the goal of increased total capacitance.
Solution Approach 2:
The patent promotes homogeneity by designing all capacitor units to have identical capacitance values through equal overlapping regions. This homogeneous design approach simplifies manufacturing and design processes compared to creating capacitors with different capacitance values, as it standardizes the structural parameters across all capacitor units while still achieving increased total capacitance through parallel combination.
Data Source
AI summary
A semiconductor structure including the following components is provided. A first capacitor structure includes first, second, and third electrode layers and first and second dielectric layers. The second electrode layer is disposed on the first electrode layer. The top-view pattern of the second electrode layer partially overlaps the top-view pattern of the first electrode layer to have a first overlapping region. The third electrode layer is disposed on the second electrode layer. The top-view pattern of the third electrode layer partially overlaps the top-view pattern of the second electrode layer to have a second overlapping region. The first overlapping region and the second overlapping region have the same top-view area. The first dielectric layer is disposed between the first electrode layer and the second electrode layer. The second dielectric layer is disposed between the second electrode layer and the third electrode layer.