Stacked Ground-Shield Capacitor Structure for High-Frequency Filters

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

The parasitic effects in capacitive components lead to non-linear capacitance changes and reduced self-resonant frequencies, limiting their application frequency range, especially at high frequencies, causing electrical abnormalities in products like LC filters.

Innovation Solution

A capacitor design with two layers of signal electrodes and a layer of ground electrode in between, along with a conductive through via that penetrates the dielectric layer and is electrically separated from the ground electrode, enhancing the self-resonant frequency and stability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If the size of the capacitor is increased, then the capacitance value increases, but the parasitic effect increases and self-resonant frequency drops

Engineering Contradiction:
Improvecapacitance valueVSAvoidself-resonant frequency
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The capacitor is divided into multiple electrode layers (first electrode, second electrode, and third electrode) with dielectric layers between them. This segmentation allows the capacitor to achieve higher capacitance through stacked configuration while maintaining smaller footprint and reduced parasitic effects compared to a single large capacitor.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent transitions from a planar capacitor structure to a three-dimensional stacked structure with electrodes arranged in multiple layers vertically. This dimensional change enables increased capacitance density without proportionally increasing the planar area, thereby reducing parasitic inductance and maintaining higher self-resonant frequency.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Speed

If the operating frequency is greater than the self-resonant frequency, then the capacitive component operates in inductive region, but the capacitance value deviates significantly from design

Engineering Contradiction:
Improveoperating frequencyVSAvoidcapacitance value stability
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

The patent modifies the structural parameters of the capacitor, specifically the arrangement of electrodes and dielectric layers, to optimize the self-resonant frequency. By creating a multi-layer structure with specific electrode configurations, the self-resonant frequency is elevated to match or exceed the operating frequency, ensuring the capacitor remains in its capacitive region and maintains stable capacitance value.

Inventive Principle:
Principle #35Parameter changes

3Device complexity

If a conventional capacitor structure is used, then the device complexity is low, but the electrical abnormalities occur at high frequencies

Engineering Contradiction:
Improvecapacitor structureVSAvoidelectrical performance
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The capacitor structure employs a nested configuration where the third electrode is positioned between the first and second electrodes, with dielectric layers nested between all electrode combinations. This nested arrangement maximizes the use of available space, increases capacitance density, and reduces parasitic effects without requiring a proportionally larger device footprint.

Inventive Principle:
Principle #7Nested doll (Nesting)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design significantly increases the self-resonant frequency and reduces capacitance value variation, achieving a high self-resonant frequency of up to 6.7 GHz and maintaining stability, thus minimizing electrical abnormalities.

Implementation Method 1

The dielectric layer is disposed between the first electrode and the third electrode and between the second electrode and the third electrode

Methodology Applied
Scientific EffectDielectric: Dielectric

Implementation Method 2

The conductive through via penetrates the dielectric layer and the third electrode to be connected to the first electrode and the second electrode

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS11776920B2Capacitor and filter and redistribution layer structure including the same
Publication Date: 2023.10.03 IND TECH RES INST
  • US11776920B2 patent drawing
  • US11776920B2 patent drawing
  • US11776920B2 patent drawing

AI summary

Provided a filter and a redistribution layer structure including the same. The capacitor includes a first electrode, a second electrode, a third electrode, a dielectric layer, and a conductive through via. The second electrode is disposed above the first electrode. The third electrode is disposed between the first electrode and the second electrode. The dielectric layer is disposed between the first electrode and the third electrode and between the second electrode and the third electrode. The conductive through via penetrates the dielectric layer and the third electrode to be connected to the first electrode and the second electrode, and is electrically separated from the third electrode. The first electrode and the second electrode are signal electrodes, and the third electrode is a ground electrode.