Stacked Capacitor Terminal Layout for Low-Inductance Module Connection
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices face challenges in reducing inductance due to extended wiring lengths between the semiconductor module and the capacitor, which is exacerbated by the lack of effective connection mechanisms on the capacitor side.
Innovation Solution
The semiconductor device incorporates a capacitor with a second insulating member between its connection terminals and a semiconductor module with a multi-layer terminal portion, where the first and second power terminals are stacked with insulating members, and coupling members with laser welding marks connect the terminals, reducing inductance by minimizing wiring length and offsetting magnetic fields.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If screw connection is used between semiconductor module and capacitor, then connection process is facilitated, but wiring length is extended and inductance is increased
Solution Approach 1:
The patent replaces the mechanical screw connection system with a laser welding system. The connection structure includes a connection plate with connection portions that are directly welded to the capacitor terminals, eliminating the need for screws and mechanical fastening. This substitution of mechanical connection with laser welding achieves both easy manufacture (through automated laser welding) and reduced inductance (through direct, short connection paths).
Solution Approach 2:
The patent transitions from a planar connection approach to a three-dimensional stacked configuration. The connection plate is positioned between the semiconductor module and capacitor, with connection portions extending in multiple directions to establish direct electrical connections. This spatial reconfiguration reduces wiring length by utilizing the vertical dimension and direct line-of-sight connections, thereby reducing inductance while maintaining manufacturing ease through standardized laser welding processes.
2Object-affected harmful factors
If wiring length between semiconductor module and capacitor is reduced, then inductance is reduced, but connection complexity increases
Solution Approach 1:
The connection plate is segmented into multiple connection portions, each dedicated to connecting specific terminals. The connection plate includes a first connection portion for connecting to the first capacitor terminal and a second connection portion for connecting to the second capacitor terminal. This segmentation allows for simplified, specialized connection structures at each interface, reducing overall complexity while achieving short wiring lengths and low inductance through direct, purpose-built connection paths.
3Object-affected harmful factors
If direct connection between capacitor terminals and power terminals is implemented, then inductance is reduced, but insulation reliability may be compromised
Solution Approach 1:
The connection plate serves as an intermediary component between the capacitor and the semiconductor module. It provides dedicated connection portions that directly connect to capacitor terminals while maintaining proper insulation through its structural design. The connection plate's configuration allows direct, short connection paths (reducing inductance) while its insulating properties and structured layout ensure reliable electrical isolation where needed, thus maintaining insulation reliability despite direct connections.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly reduces the inductance of the semiconductor device by minimizing the length of individual wiring between the semiconductor module and the capacitor, while also offsetting magnetic fields, thereby improving the device's performance and efficiency.
Implementation Method 1
the second connection terminal is electrically connected to the second power terminal via a second laser welding mark
Data Source
AI summary
A semiconductor device includes a capacitor including a first connection terminal, a second connection terminal, and a second insulating member disposed between the first connection terminal and the second connection terminal, and a semiconductor module including a multi-layer terminal portion in which a first power terminal, a first insulating member, and a second power terminal are sequentially stacked. The first connection terminal and the second connection terminal extend to an outside, the first power terminal includes a first bonding area electrically connected to the first connection terminal, the second power terminal includes a second bonding area electrically connected to the second connection terminal, and the first insulating member includes a terrace portion extending from an end portion of the second power terminal toward the first connection terminal in a plan view of the semiconductor module.