Stacked Capacitor Terminals for Low-Inductance Semiconductor Modules
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Solution Overview
Problem
Conventional semiconductor device connection methods between semiconductor modules and capacitors increase inductance due to extended wiring lengths, with existing solutions focusing on reducing inductance on the semiconductor module side but not effectively addressing the issue on the capacitor side, resulting in minimal overall inductance reduction.
Innovation Solution
A semiconductor device design featuring a capacitor with a case, first and second connection terminals, and a flexible insulating member, along with a semiconductor module having multi-layer terminal portions, where the connection terminals and insulating member are stacked and connected using coupling members with laser welding, minimizing wiring length and inductance by arranging the current paths to offset magnetic fields.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If screw-based connection method is used between semiconductor module and capacitor, then ease of manufacture is improved, but inductance increases due to extended wiring length
Solution Approach 1:
The patent replaces the mechanical screw-based connection system with a laser welding-based electrical connection system. The connection structure includes a semiconductor module with terminal portions and a capacitor with connection terminals that are directly welded together, eliminating the need for screw fasteners and associated wiring harnesses. This substitution of mechanical connection with direct electrical welding simultaneously improves ease of manufacture through automated laser welding processes and reduces inductance by minimizing wiring length.
Solution Approach 2:
The patent merges the semiconductor module and capacitor into an integrated connection structure where the terminal portions of the semiconductor module and the connection terminals of the capacitor are directly connected through laser welding. This merging eliminates intermediate wiring components and reduces the overall inductance of the circuit by creating a compact, integrated connection between the two components.
2Object-affected harmful factors
If wiring length is reduced to decrease inductance, then inductance is reduced, but manufacturing complexity increases
Solution Approach 1:
The patent transitions from a planar wiring layout to a three-dimensional stacked configuration. The semiconductor module and capacitor are arranged in vertical layers with terminal portions extending in different spatial dimensions. This dimensional change allows for direct connection between components without requiring long lateral wiring runs, thereby reducing inductance while maintaining manufacturability through standardized multi-layer assembly processes.
Solution Approach 2:
The patent segments the connection structure into distinct terminal portions: a first terminal portion in the semiconductor module, a second terminal portion in the capacitor, and intermediate connection elements. This segmentation allows each component to be optimized independently for its specific function while maintaining overall integration, reducing inductance through minimized current path length without excessively increasing manufacturing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design significantly reduces inductance between the semiconductor module and capacitor by minimizing wiring length and arranging current paths to offset magnetic fields, compared to traditional screw-based connections.
Implementation Method 1
the connection terminals and insulating member are stacked and connected using coupling members with laser welding
Data Source
AI summary
A capacitor includes a case including a capacitor element, a first connection terminal, a second connection terminal, and a second insulating sheet formed between the first connection terminal and the second connection terminal, and the first connection terminal, the second insulating sheet, and the second connection terminal extend to the outside from the case. A semiconductor module includes a multi-layer terminal portion in which a first power terminal, a first insulating sheet, and a second power terminal are sequentially stacked. The first power terminal includes a first bonding area electrically connected to the first connection terminal, and the second power terminal includes a second bonding area electrically connected to the second connection terminal. The first insulating sheet includes a terrace portion that extends in a direction from the second bonding area towards the first bonding area in a planar view.