Stacked Capacitor Cell Layout for Lower ESR in Silicon Capacitors

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Solution Overview

Problem

Integrated circuits face challenges in reducing parasitic resistance in silicon capacitors due to high resistance characteristics of connecting conductors, which increases device area when more conductors are added.

Innovation Solution

A capacitor structure with a substrate, capacitor cells, first and second cell plates, and vias is designed to minimize resistance by using shorter vias connected to top cell plates, reducing the overall resistance and area while maintaining or increasing capacitance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the number of connecting conductors is increased to reduce parasitic resistance, then the parasitic resistance characteristics improve, but the device area increases

Engineering Contradiction:
Improveparasitic resistance characteristicsVSAvoiddevice area
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent transitions from planar conductor arrangement to three-dimensional stacked capacitor structure with vertical vias. Multiple capacitor cells are stacked in the vertical dimension, allowing multiple connection points without increasing lateral device area. The vias extend vertically through the stacked structure, enabling electrical connections in the third dimension while maintaining compact footprint.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

Multiple capacitor cells are nested vertically in a stacked configuration, with each cell containing conductive plates and dielectric layers. The vias are nested within the stacked structure, passing through multiple capacitor cells to provide electrical connections. This nesting allows multiple conductors to be integrated within the same lateral footprint by utilizing vertical space.

Inventive Principle:
Principle #7Nested doll (Nesting)

2Reliability

If the number of connecting conductors is increased to reduce parasitic resistance, then the parasitic resistance characteristics improve, but the device complexity increases

Engineering Contradiction:
Improveparasitic resistance characteristicsVSAvoiddevice complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

Multiple capacitor cells are merged into a single stacked structure, sharing common vias and interconnect structures. The vias serve multiple capacitor cells simultaneously, providing electrical connections through the entire stack. This merging reduces the number of separate conductor elements needed compared to implementing multiple individual capacitors, thereby reducing overall device complexity while maintaining low parasitic resistance.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The vias in the stacked capacitor structure serve multiple functions: they provide electrical connections for multiple capacitor cells, act as interconnect elements between different stacking levels, and contribute to reducing parasitic resistance across the entire capacitor array. This multi-functionality reduces the need for dedicated separate conductors for each capacitor cell.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Reliability

If shorter vias are used to reduce resistance, then the parasitic resistance decreases, but the capacitance density may be affected

Engineering Contradiction:
Improveequivalent series resistanceVSAvoidcapacitance density
Core Design Contradiction:
ReliabilityVSQuantity of substance

Solution Approach 1:

The patent compensates for reduced via length by increasing the vertical stacking height of capacitor cells. Multiple capacitor cells are stacked in the vertical dimension, increasing the total capacitance through additive effect of individual cell capacitances. The extended vertical dimension provides additional capacitance volume to offset the reduced contribution from shorter vias.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent optimizes the dimensions and arrangement of capacitor cells within the stacked structure. By adjusting cell size, dielectric material properties, and stacking configuration, the overall capacitance density is maintained or enhanced despite the use of shorter vias. The parameters of the capacitor cells are tuned to compensate for the reduced via contribution to total capacitance.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS20250311392A1Capacitor structure
Publication Date: 2025.10.02 AP MEMORY TECH CORP
  • US20250311392A1 patent drawing
  • US20250311392A1 patent drawing
  • US20250311392A1 patent drawing

AI summary

A capacitor structure is provided. The capacitor structure includes a substrate, a plurality of capacitor cells, a first cell plate, a plurality of second cell plates, and a plurality of vias. The plurality of capacitor cells are formed upon the substrate. The first cell plate is disposed between the substrate and the plurality of capacitor cells, and the plurality of second cell plates are disposed on the plurality of capacitor cells respectively. The vias are disposed on the second cell plates. The plurality of capacitor cells are connected in series.