Stacked Capacitor PUF Structure for Compact Secure Random Codes
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Solution Overview
Problem
Current PUF generators are large in size and there is a need to reduce their size while maintaining their security and functionality.
Innovation Solution
A PUF generator structure with a specific electrode and dielectric layer configuration, including multiple contacts and dielectric layers, allows for a smaller form factor and integration with capacitor processes, generating a random code through dielectric breakdown.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If traditional PUF generator structures are used, then security and random code generation capability are maintained, but the device size becomes large
Solution Approach 1:
The patent transitions from planar electrode arrangements to a three-dimensional stacked capacitor structure with multiple electrode layers and dielectric layers. This vertical stacking enables the PUF generator to achieve comparable security functionality with reduced footprint area, directly resolving the contradiction between device size and security maintenance.
Solution Approach 2:
The patent implements a nested structure where multiple electrode layers and dielectric layers are stacked within each other, forming a compact capacitor-based PUF generator. The first electrode layer, second electrode layer, and intermediate dielectric layers are nested vertically, enabling high-density integration while maintaining the random code generation capability required for security applications.
2Reliability
If complex PUF generator structures are used, then security is maintained, but manufacturing complexity increases
Solution Approach 1:
The patent employs a capacitor structure that serves multiple functions: it acts as both the security element for PUF generation and a standard electronic component compatible with existing CMOS fabrication processes. This multi-functionality reduces overall device complexity by leveraging established manufacturing infrastructure rather than requiring specialized complex structures.
Solution Approach 2:
The patent utilizes manufacturing process parameters (such as dielectric material properties, electrode dimensions, and stacking sequences) to control the PUF characteristics. By adjusting these parameters during standard fabrication, the system achieves high security without increasing structural complexity, as the same fabrication line can produce varied secure keys through parameter modulation.
3Productivity
If larger PUF generator structures are used, then random code generation capability is maintained, but integration with standard processes becomes difficult
Solution Approach 1:
The capacitor-based PUF generator structure is designed to be fully compatible with standard CMOS fabrication processes, enabling seamless integration into existing semiconductor manufacturing lines. The same process steps used for creating standard capacitors can be adapted to create secure PUF elements, greatly improving integration efficiency while maintaining compact size.
Solution Approach 2:
By stacking electrode and dielectric layers vertically, the patent achieves high functionality in a small footprint that can be densely packed on standard chips. This three-dimensional arrangement allows efficient integration with other circuit elements without requiring large planar areas, facilitating compatibility with standard process geometries and design rules.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure achieves a smaller PUF generator size and enables efficient generation of random codes through simple enrollment and extraction operations.
Implementation Method 1
generating a random code through dielectric breakdown
Data Source
AI summary
A physical unclonable function (PUF) generator structure including a substrate and a PUF generator is provided. The PUF generator includes a first electrode layer, a second electrode layer, a first dielectric layer, a first contact, a second contact, and a third contact. The first electrode layer is disposed on the substrate. The second electrode layer is disposed on the first electrode layer. The first dielectric layer is disposed between the first electrode layer and the second electrode layer. The first contact and the second contact are electrically connected to the first electrode layer and are separated from each other. The third contact is electrically connected to the second electrode layer.