Vertically Stacked Capacitors for Higher Capacitance in Less Area
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Solution Overview
Problem
Capacitors in semiconductor devices occupy more space than other electronic components, hindering miniaturization efforts.
Innovation Solution
A semiconductor device design that includes vertically stacked capacitor structures connected in series or parallel, utilizing a first and second capacitor structure with conductive vias for electrical coupling, allowing for higher breakdown voltage and capacitance without increasing the occupied area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If capacitor structures are enlarged to increase capacitance and breakdown voltage, then performance is improved, but device area increases
Solution Approach 1:
The patent transitions from planar capacitor arrangement to vertical stacking, utilizing the third dimension (height) to increase capacitance and breakdown voltage. Multiple capacitor structures are stacked vertically, allowing performance improvement without expanding the lateral device footprint.
Solution Approach 2:
The capacitor structure is divided into multiple discrete capacitor units stacked vertically. Each capacitor includes separate bottom electrode, storage capacitor, and top electrode layers, allowing independent optimization and connection through conductive vias to achieve cumulative performance benefits.
2Quantity of substance
If capacitor structures are enlarged to increase capacitance, then storage capacity is improved, but device area increases
Solution Approach 1:
The patent utilizes vertical stacking to increase total capacitance by adding capacitor units in the vertical dimension rather than expanding laterally. The stacked configuration multiplies capacitance while maintaining a compact footprint.
Solution Approach 2:
Capacitor structures are nested vertically, with each capacitor unit containing electrode and storage capacitor layers that are stacked one above another, similar to nested dolls, maximizing space utilization in the vertical direction.
Data Source
AI summary
A semiconductor device includes a substrate, a first bottom electrode, a first storage capacitor, a first top electrode, a second bottom electrode, a second storage capacitor, and a second top electrode. The first bottom electrode is disposed over the substrate. The first storage capacitor is disposed over the first bottom electrode. The first top electrode is disposed over the first storage capacitor. The second bottom electrode is disposed over, and electrically coupled to, the first top electrode. The second storage capacitor is disposed over the second bottom electrode. The second storage capacitor vertically overlaps the first storage capacitor. The second top electrode is disposed over the second storage capacitor.