Stacked Deep Trench Capacitors in Substrate Cores for Stable Power Delivery
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Solution Overview
Problem
High-power semiconductor dies require stable voltage and large current supply, which existing capacitor placements near the dies are inefficient in providing, leading to power delivery noise and real estate utilization issues.
Innovation Solution
Embedding deep trench capacitors within the substrate core of a circuit board, stacked with through-silicon vias for connection, reducing height mismatch and providing a stable power path to the semiconductor die.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If capacitors are placed near the semiconductor dies on the same package, then power delivery noise is suppressed, but real estate utilization is insufficient and power delivery stability is inadequate
Solution Approach 1:
The patent transitions from planar capacitor placement on the package surface to three-dimensional embedding within the substrate core. Deep trench capacitors are formed by etching vertical trenches into the substrate, creating vertical stacking arrangements that utilize the Z-dimension. This dimensional transition enables multiple capacitors to be positioned in close proximity to the die without increasing lateral footprint, thereby improving power delivery stability while maintaining compact real estate utilization.
Solution Approach 2:
The patent implements nesting by placing deep trench capacitors inside the substrate core, which itself is embedded within the package structure. The capacitors are nested within the substrate volume, and the substrate is nested within the package, creating a hierarchical nested arrangement. This nested configuration allows capacitors to be positioned near the die while utilizing the internal volume of the substrate, resolving the contradiction between proximity for stability and space efficiency.
2Area of stationary object
If deep trench capacitors are embedded in the substrate core, then real estate usage is reduced, but height mismatch and mechanical instability may occur
Solution Approach 1:
The patent applies local quality by providing structural support specifically at the capacitor locations within the substrate core. Fill material is selectively placed in the trenches around the deep trench capacitors to provide localized mechanical support and stress distribution. This localized reinforcement addresses the mechanical stability concern at specific critical points without requiring overall substrate thickening, thus maintaining compact real estate usage while preventing fracture and delamination at the capacitor-substrate interfaces.
Solution Approach 2:
The patent employs composite material structures by combining the substrate material with fill material in the trench regions. The fill material creates a composite structure that bridges the height difference between the substrate surface and the embedded capacitors, providing mechanical coupling and stress distribution. This composite approach resolves the height mismatch issue and enhances mechanical stability while maintaining the space-efficient embedded configuration.
3Ease of manufacture
If capacitors are placed far from the dies, then manufacturing is simplified, but power delivery performance deteriorates
Solution Approach 1:
The patent implements preliminary action by forming the deep trench capacitors and their supporting structures within the substrate core before the final package assembly. The substrate core with embedded capacitors is prepared as a pre-assembled unit, and through-silicon vias are established in advance to create direct vertical interconnects to the die. This preliminary preparation enables close proximity positioning that optimizes power delivery performance while maintaining manufacturing efficiency through standardized pre-assembly processes.
Data Source
AI summary
Technologies for components embedded in a substrate core are disclosed. In one embodiment, power components such as deep trench capacitors are disposed in a cavity defined in a substrate core for a circuit board of an integrated circuit package, such as a processor. The power components are stacked on top of each other, allowing for the stack of power components to match the height of the substrate core, even when the height of the individual power components is less than the height of the substrate core. The stack may include, e.g., three or more power components. Through-silicon vias in some or all of the power components can allow for connections through one power component to another. Configuring the power components in this manner can provide mechanical stability to the power components and substrate core and provide power to a semiconductor die mounted on the circuit board.