Stacked Channel Active Contact Layout for Scaled Semiconductor Devices
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Solution Overview
Problem
As semiconductor devices scale down, their operation characteristics deteriorate, necessitating improved integration and performance to overcome limitations.
Innovation Solution
The semiconductor device incorporates a through active contact design with specific conductive and via portions, and a mask layer configuration that reduces the need for additional conductive contacts, minimizing size and manufacturing costs while preventing short circuits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the semiconductor device is scaled down to increase integration, then the device size is reduced and integration is improved, but operation characteristics deteriorate
Solution Approach 1:
The active contact is divided into multiple segments: a lower active contact with wider width for better electrical connection, and an upper active contact with narrower width for size reduction. This segmentation allows each part to optimize its function while maintaining overall device performance despite scaling down.
Solution Approach 2:
The upper active contact is positioned within the projection area of the lower active contact, creating a nested configuration. This nesting allows the upper contact to be smaller while still maintaining electrical connection through the lower contact, enabling device scaling without compromising electrical characteristics.
2Reliability
If additional conductive contacts are added to maintain electrical connections, then reliability is improved, but device complexity and manufacturing cost increase
Solution Approach 1:
The lower active contact serves multiple functions: it provides electrical connection for the upper active contact, connects to the source/drain region, and acts as a support structure. This multi-functionality reduces the need for separate conductive elements, simplifying the device while maintaining reliability.
Solution Approach 2:
The lower active contact acts as an intermediary element that bridges the upper active contact and the source/drain region. This intermediate structure enables electrical connection without requiring direct contact between the upper contact and source/drain, reducing complexity in the connection architecture.
3Area of moving object
If the active contact width is reduced uniformly, then device size is reduced, but electrical characteristics deteriorate
Solution Approach 1:
The active contact structure exhibits local quality variation: the lower active contact has a wider width to ensure good electrical connection and low resistance, while the upper active contact has a narrower width to reduce overall device area. This localized differentiation of dimensions allows simultaneous optimization of electrical characteristics and device size.
Data Source
AI summary
Provided is a semiconductor device including a lower source/drain pattern, a lower channel structure connected to the lower source/drain pattern, a lower gate electrode overlapping the lower channel structure and extending in a first direction, a lower active contact on the lower source/drain pattern, an upper channel structure overlapping the lower channel structure, an upper source/drain pattern connected to the upper channel structure, an upper gate electrode overlapping the upper channel structure and extending in the first direction, an interlayer structure between the lower channel structure and the upper channel structure, and a through active contact extending through the interlayer structure, and electrically connected to the upper source/drain pattern and the lower active contact.