Stacked Channel Semiconductor Layout for Trench Isolation Reliability
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor devices face challenges in achieving high integration and reliability due to limitations in device isolation and transistor design, particularly in the alignment and separation of active patterns and channel patterns, which affect electrical characteristics and durability.
Innovation Solution
The semiconductor device design includes aligned first and second active patterns separated by trenches, with sequentially stacked semiconductor patterns and a dummy gate electrode, along with a gate spacer that covers the trench sidewalls, enhancing channel patterns and reducing source/drain pattern degradation near the division region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If active patterns are separated by trenches to improve device isolation and reliability, then device isolation and reliability are improved, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The device is divided into multiple active patterns (first active pattern, second active pattern) separated by trenches. This segmentation isolates different functional regions, improving device reliability by preventing interference between adjacent structures while maintaining manageable complexity through modular design.
Solution Approach 2:
Different regions of the device are given different properties: the first active pattern has a gate spacer on one side, while the second active pattern has a gate spacer on the other side. This local differentiation allows each region to be optimized for its specific function while maintaining overall device reliability.
2Reliability
If gate spacers are added to cover trench sidewalls to reduce source/drain pattern degradation, then source/drain pattern durability is improved, but device complexity increases
Solution Approach 1:
Gate spacers are positioned beforehand to cover the sidewalls of trenches adjacent to source/drain patterns. This protective structure is built in advance to prevent degradation during subsequent processing steps, thereby improving source/drain pattern durability without significantly increasing operational complexity.
Solution Approach 2:
The gate spacer acts as an intermediary protective layer between the trench structure and the source/drain patterns. It mediates the interaction by providing mechanical protection and preventing degradation, thus improving durability while adding only a single structural element.
3Productivity
If multiple semiconductor patterns are stacked to enhance channel patterns for high integration, then integration density is improved, but manufacturing precision requirements increase
Solution Approach 1:
Multiple semiconductor patterns are stacked vertically to form a multi-layer channel structure. This nesting approach increases integration density by utilizing the vertical dimension, allowing more functional elements to be packed into a smaller planar area while maintaining manufacturability through sequential deposition processes.
Data Source
AI summary
Semiconductor devices and methods of forming the same are provided. Semiconductor devices may include first and second active patterns on a substrate. Each of the first and second active patterns may extend in a first direction. The first and second active patterns may be aligned along the first direction and may be separated by a first trench extending in a second direction. The first trench may define a first sidewall of the first active pattern. The semiconductor devices may also include a channel pattern including first and second semiconductor patterns stacked on the first active pattern, a dummy gate electrode on the channel pattern and extending in the second direction, and a gate spacer on one side of the dummy gate electrode, the one side of the dummy gate electrode being adjacent to the first trench. The gate spacer may cover a first sidewall of the first active pattern.