Stacked Semiconductor Bonding Pad Structure for Heat and Adhesion
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Solution Overview
Problem
Current semiconductor packaging technologies face challenges in achieving reliable connections between stacked semiconductor chips, particularly in ensuring strong adhesion and heat transfer, which can lead to defects such as interfacial peeling and reduced performance.
Innovation Solution
The semiconductor package design incorporates a protrusion on the bonding pad that extends into the wiring pad, increasing the contact area and improving adhesion, while also enhancing heat transfer characteristics through direct bonding without separate connection members, using dielectric-to-dielectric and copper-to-copper bonding techniques.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If conventional bonding pad design is used, then manufacturing is simple, but adhesion strength and heat transfer are insufficient
Solution Approach 1:
The bonding pad structure transitions from a two-dimensional planar configuration to a three-dimensional protruding structure. The protrusion extends vertically from the bonding pad surface into the wiring pad, creating additional bonding interface area. This dimensional change significantly increases the contact area between bonding pads, thereby improving adhesion strength and heat transfer without requiring multiple separate components.
Solution Approach 2:
The bonding pad features a protruding structure with curved or rounded surfaces rather than sharp edges. This curved geometry increases the surface area in contact with the wiring pad and distributes mechanical and thermal stresses more evenly across the bonding interface, enhancing both adhesion strength and heat transfer efficiency while maintaining structural integrity.
2Temperature
If separate connection members are used, then electrical connection is achieved, but heat transfer and adhesion are reduced
Solution Approach 1:
The bonding pad structure integrates multiple functions into a single unified component. The protruding bonding pad simultaneously provides electrical connection, mechanical adhesion, and thermal conduction between stacked semiconductor chips. By merging these functions into one structure rather than using separate connection members, the patent achieves superior heat transfer and adhesion while simplifying the overall connection structure.
Solution Approach 2:
The bonding pad is constructed from composite material layers including copper for electrical conductivity and thermal conduction, and solder or alloy materials for adhesion. This composite structure optimizes both heat transfer and bonding strength by combining materials with complementary properties, eliminating the need for separate connection members with different material compositions.
3Reliability
If small contact area is used, then manufacturing precision requirements are lower, but reliability and heat transfer are insufficient
Solution Approach 1:
The protruding bonding pad structure extends in the vertical dimension, creating a longer bonding interface path between chips. This three-dimensional configuration increases the effective contact area and bonding strength, providing greater tolerance for lateral misalignment during manufacturing while maintaining high connection reliability and heat transfer efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design significantly improves the reliability of semiconductor packages by increasing the contact area between bonding pads and wiring pads, reducing defects, and enhancing heat transfer, resulting in more stable and efficient chip connections.
Implementation Method 1
increasing the contact area and improving adhesion, while also enhancing heat transfer characteristics through direct bonding
Implementation Method 2
enhancing heat transfer characteristics through direct bonding without separate connection members
Data Source
AI summary
A semiconductor package includes a first semiconductor chip including a first semiconductor layer, a first through-electrode passing through the first semiconductor layer in a vertical direction, and a first bonding pad connected to the first through-electrode, and a second semiconductor chip including a second semiconductor layer on the first semiconductor chip, a wiring structure between the second semiconductor layer and the first semiconductor chip, a wiring pad connected to the wiring structure below the wiring structure, and a second bonding pad connected to the wiring pad below the wiring pad and in contact with the first bonding pad, wherein the second bonding pad includes a protrusion protruding toward the wiring pad.