Stacked Chip Package via Holes and Anisotropic Conductive Film

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Solution Overview

Problem

Current semiconductor device architectures face challenges with increased complexity and size due to multiple central processing units (CPUs) requiring expanded motherboard space, timing synchronization issues, and inadequate heat dissipation, especially when stacking integrated chips.

Innovation Solution

A semiconductor device design featuring glass substrates with via holes and anisotropic conductive films for chip-on-glass bonding, allowing for stacked chip integration with enhanced heat dissipation and reduced packaging dimensions by using a trench layout and conductive bumps for electrical connections.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If multiple integrated chips are stacked to reduce packaging size, then packaging dimension is reduced, but heat dissipation becomes inadequate

Engineering Contradiction:
Improvepackaging dimensionVSAvoidheat dissipation
Core Design Contradiction:
Volume of moving objectVSTemperature

Solution Approach 1:

The patent utilizes the anisotropic conductive film's ability to flow into via holes, creating a porous-like structure that facilitates heat dissipation. The via holes act as channels for heat removal while maintaining the compact stacked configuration, resolving the contradiction between reduced packaging volume and adequate heat dissipation.

Inventive Principle:
Principle #31Porous materials

2Reliability

If anisotropic conductive film is applied for chip bonding, then electrical connection is achieved, but uneven film distribution and bubble formation occur

Engineering Contradiction:
Improveelectrical connectionVSAvoidfilm distribution uniformity
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent extracts the excess anisotropic conductive film into via holes, removing the harmful effect of uneven film distribution and bubble formation. This allows the bonding process to proceed with relaxed film application control while maintaining reliable electrical connections.

Inventive Principle:
Principle #2Taking out (Extraction)

3Productivity

If multiple CPUs are distributed on motherboard to meet processing needs, then processing capacity is enhanced, but motherboard size and circuit complexity increase

Engineering Contradiction:
Improveprocessing capacityVSAvoidcircuit layout complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent transitions from a two-dimensional distributed CPU architecture on the motherboard to a three-dimensional stacked chip architecture. By stacking chips vertically and using via holes for inter-layer connections, the system achieves enhanced processing capacity while reducing motherboard space requirements and simplifying circuit layout.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design simplifies circuit layout, ensures consistent timing synchronization, reduces packaging size, and improves heat dissipation by allowing the anisotropic conductive film to flow into via holes, addressing issues of uneven film distribution and bubble formation.

Implementation Method 1

a first anisotropic conductive film deployed around the first device conductive bumps and the first substrate connectors, and flowing into the first via hole

Methodology Applied
Scientific EffectAnisotropic conduction:

Implementation Method 2

improves heat dissipation by allowing the anisotropic conductive film to flow into via holes

Methodology Applied
Scientific EffectHeat conduction: Conduction (thermal)

Data Source

PatentUS10014283B1High heat dissipation stacked chip package structure and the manufacture method thereof
Publication Date: 2018.07.03 JING QIAO CORP LTD
  • US10014283B1 patent drawing
  • US10014283B1 patent drawing
  • US10014283B1 patent drawing

AI summary

The present invention provides a semiconductor device including a first glass substrate, a first integrated chip, a first anisotropic conductive film, a second glass substrate, a second integrated chip, a second anisotropic conductive film, and a packaging body.