Stacked Semiconductor Chip Package with Lateral Heat Dissipation
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Solution Overview
Problem
The increasing heat generation within semiconductor packages due to the inclusion of multiple types of semiconductor chips, such as microprocessor units (MPUs) and memory chips, poses a challenge for effective heat dissipation, leading to potential operational reliability issues.
Innovation Solution
A semiconductor package design featuring a package base substrate with a first semiconductor chip and a stacked semiconductor chip structure, where the stacked semiconductor chip structure includes a plurality of second semiconductor chips with penetrating electrodes, a thermal interface material (TIM) layer, and a heat dissipation member, allowing for efficient heat discharge from the package.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple types of semiconductor chips are included in a single semiconductor package to increase memory capacity, then the functionality and capacity of the package are improved, but the heat generation within the package increases
Solution Approach 1:
The semiconductor package is divided into multiple stacked chip layers (first semiconductor chip, second semiconductor chip, third semiconductor chip) with distinct functional regions. Each chip can be independently managed for heat dissipation, allowing different cooling strategies for different functional blocks within the same package.
Solution Approach 2:
Different regions of the package are provided with different heat dissipation structures. The first heat dissipation structure is positioned between the first and second semiconductor chips, while the second heat dissipation structure is positioned between the second and third semiconductor chips. This allows localized heat management tailored to the specific thermal characteristics of each chip region.
2Quantity of substance
If multiple semiconductor chips are stacked using penetrating electrodes to increase memory capacity, then the storage capacity is improved, but the heat dissipation efficiency deteriorates
Solution Approach 1:
Heat dissipation is achieved not only through the vertical stacking direction but also through lateral heat transfer paths. The heat dissipation structures extend laterally between chips, providing additional thermal conduction pathways that do not interfere with the vertical electrical connections through penetrating electrodes.
Solution Approach 2:
The heat dissipation structures act as intermediary thermal pathways between the semiconductor chips. These structures facilitate heat transfer from high-power chips to lower-power regions or to external heat sinks without interfering with the electrical function of the penetrating electrodes, effectively mediating the thermal management of the stacked package.
3Adaptability or versatility
If different types of semiconductor chips are integrated in a single package, then the multifunctionality is improved, but the heat concentration in internal portions increases
Solution Approach 1:
Heat is extracted from the internal portions of the package by introducing dedicated heat dissipation structures between the stacked chips. The first heat dissipation structure extracts heat from the region between the first and second chips, while the second heat dissipation structure extracts heat from the region between the second and third chips, preventing heat accumulation in internal regions.
Solution Approach 2:
Heat dissipation structures are positioned in advance between the semiconductor chips during the stacking process. This preliminary placement of thermal management components ensures that heat pathways are established before the chips are fully assembled and operational, preventing heat concentration before it can occur during device operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively reduces heat concentration within the package by allowing heat generated by high-power chips to be dissipated externally, enhancing the operational reliability and performance of the semiconductor package.
Implementation Method 1
A thermal interface material (TIM) layer may be disposed between the heat dissipation member and the at least one first semiconductor chip and the at least one stacked semiconductor chip structure
Implementation Method 2
A heat dissipation member is disposed on the at least one first semiconductor chip and the at least one stacked semiconductor chip structure
Data Source
AI summary
A semiconductor package includes a package base substrate, at least one first semiconductor chip disposed on the package base substrate, and at least one stacked semiconductor chip structure disposed on the package base substrate adjacent to the at least one first semiconductor chip. The at least one stacked semiconductor chip includes a plurality of second semiconductor chips. A penetrating electrode region including a plurality of penetrating electrodes is disposed adjacent to an edge of the at least one stacked semiconductor chip structure.