Stacked Chip Package with Oxide Encapsulation for Warpage Control
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Solution Overview
Problem
The semiconductor industry faces manufacturing challenges in developing new packaging technologies for semiconductor devices that improve density and functionality, particularly in achieving efficient bonding and encapsulation of semiconductor dies within smaller package structures while minimizing thermal expansion mismatch and ensuring reliability.
Innovation Solution
A method for forming a chip package that involves bonding semiconductor dies to a substrate using fusion or hybrid bonding, encapsulating with a dielectric layer made of semiconductor oxide material, and forming conductive features for vertical electrical connections, which reduces warpage due to thermal expansion mismatch and enhances package reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If semiconductor dies are bonded to substrate using fusion or hybrid bonding to improve integration density, then the package size is reduced, but thermal expansion mismatch causes warpage
Solution Approach 1:
The patent changes the material parameter of the encapsulation layer by using a dielectric material with thermal expansion coefficient matched to the semiconductor die. This parameter matching resolves the thermal expansion mismatch issue that causes warpage, while still achieving the reduced package size through 3D stacking architecture.
Solution Approach 2:
The patent employs a composite structure where the encapsulation layer is formed from dielectric material that combines electrical insulation properties with thermal expansion characteristics matched to the semiconductor die. This composite approach allows simultaneous achievement of electrical isolation and thermal stability in the stacked chip package.
2Reliability
If dielectric layer is used for encapsulation to provide electrical isolation, then manufacturing complexity increases, but reliability is enhanced
Solution Approach 1:
The dielectric encapsulation layer serves multiple functions simultaneously: it provides electrical isolation between stacked chips, acts as a structural support layer, and functions as a thermal management interface. This multi-functionality reduces the need for separate components, thereby enhancing reliability without proportionally increasing manufacturing complexity.
Solution Approach 2:
The patent uses a homogeneous dielectric material for the encapsulation layer that integrates seamlessly with the existing semiconductor fabrication processes. This material homogeneity simplifies manufacturing by allowing the encapsulation step to be performed using standard dielectric deposition techniques already present in the fabrication line, rather than requiring specialized materials or processes.
3Adaptability or versatility
If conductive features are formed for vertical electrical connections to improve functionality, then manufacturing precision requirements increase, but electrical connectivity is enhanced
Solution Approach 1:
The conductive features are formed through the encapsulation layer using a preliminary patterning step that defines the via locations before the actual vertical connection is established. This preliminary action allows for precise alignment to be achieved through standard lithography processes, reducing the overall manufacturing precision requirements for the vertical electrical connections between stacked chips.
Solution Approach 2:
The patent introduces an intermediary conductive layer or via structure that mediates the electrical connection between the underlying chip and the upper chip. This intermediary element provides a larger target area for alignment, thereby reducing the precision requirements for the final vertical connection while still achieving reliable electrical connectivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables improved integration density, reduced package size, and enhanced reliability of semiconductor devices by minimizing thermal expansion issues and ensuring efficient electrical connections within the chip package structure.
Implementation Method 1
encapsulating with a dielectric layer made of semiconductor oxide material
Implementation Method 2
bonding semiconductor dies to a substrate using fusion or hybrid bonding
Implementation Method 3
bonding semiconductor dies to a substrate using fusion or hybrid bonding
Implementation Method 4
forming conductive features for vertical electrical connections
Data Source
AI summary
A chip package is provided. The chip package includes a semiconductor chip and a semiconductor die over the semiconductor chip. The chip package also includes a dielectric layer over the semiconductor chip and encapsulating the semiconductor die, and the dielectric layer is substantially made of a semiconductor oxide material. The chip package further includes a conductive feature penetrating through a semiconductor substrate of the semiconductor die and physically connecting a conductive pad of the semiconductor chip.