Stacked Semiconductor Chips Boundary Region Stress Management
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Solution Overview
Problem
The thinning of semiconductor chips to reduce package thickness leads to increased vulnerability to external stress, causing changes in circuit element characteristics and performance issues.
Innovation Solution
A semiconductor package design where circuit elements with varying stress tolerance are strategically placed: low-stress-tolerance elements in regions with less stress and high-stress-tolerance elements in regions with greater stress, and the second semiconductor chip is laminated to overlap specific regions of the first chip, minimizing characteristic changes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of stationary object
If the thickness of the semiconductor chip is reduced to compensate for the thickness of the multi-chip package, then the package thickness is reduced, but the chip becomes vulnerable to external stress and circuit element characteristics change
Solution Approach 1:
The patent applies local quality by differentiating the arrangement of circuit elements based on their stress tolerance characteristics. High-stress-tolerance elements are specifically positioned in the boundary region where stress concentrates, while low-stress-tolerance elements are placed in the first region away from the stress concentration zone. This localized differentiation of element placement resolves the contradiction by maintaining reliability through strategic positioning rather than increasing chip thickness.
Solution Approach 2:
The patent changes the parameter of circuit element stress tolerance by selecting and positioning elements with different stress tolerance characteristics in specific regions. By changing which elements are placed where based on their stress tolerance parameters, the system maintains overall package thinness while ensuring circuit stability through appropriate parameter matching between elements and their locations.
2Productivity
If multiple semiconductor elements are combined into a single multi-chip package, then productivity and integration are improved, but the laminated structure increases package thickness
Solution Approach 1:
The patent addresses the thickness issue by introducing dimensional variation in the arrangement of circuit elements within the chip structure. By creating distinct regions (first region and boundary region) at different spatial positions and strategically placing elements in these regions based on stress tolerance, the patent enables multi-chip integration without uniformly increasing package thickness, as the stress management is achieved through intra-chip spatial arrangement rather than inter-chip spacing.
3Reliability
If circuit elements are placed in the boundary region of the semiconductor chip, then stress distribution is optimized, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies segmentation by dividing the semiconductor chip into distinct regions: a first region and a boundary region. This segmentation allows for systematic placement of different circuit elements in appropriate zones, simplifying the manufacturing process by providing clear spatial guidelines rather than requiring precise positioning of every element. The boundary itself serves as a defined marker for element placement, reducing the overall precision burden compared to arbitrary positioning requirements.
Data Source
AI summary
A semiconductor package and a method for fabricating the same are provided. The semiconductor package includes a first semiconductor chip which includes a first region, a second region, and a boundary region between the first region and the second region; and a second semiconductor chip disposed on the first semiconductor chip, wherein the second semiconductor chip is overlapping the first region and a part of the boundary region, and not overlapping the second region, wherein a first circuit element is disposed in the first region and a second circuit element is disposed in the boundary region, and wherein second circuit element stress tolerance is greater than first circuit element stress tolerance.