Stacked Circuit Structure With Shoulder Via for Thin Substrates
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Solution Overview
Problem
The increasing number of input/output connections in semiconductor chips leads to larger circuit layers and substrates, resulting in increased thickness and warpage, which decreases the yield of semiconductor substrates.
Innovation Solution
A circuit structure with a high-density conductive structure disposed on a low-density conductive structure, featuring an electrical connection structure with a shoulder portion that includes a conductive via and interconnection structure, which reduces thickness and improves yield by optimizing the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the number of input/output connections in semiconductor chips is increased, then the electrical performance and functions are improved, but the circuit layer size and substrate thickness increase, leading to warpage and decreased yield
Solution Approach 1:
The patent transitions from a planar circuit layout to a three-dimensional stacked architecture. Multiple circuit layers are vertically stacked and interconnected through conductive vias, allowing increased I/O connections without proportionally increasing the substrate footprint. This vertical dimensionality change enables higher connection density while maintaining manageable substrate thickness and reducing warpage issues.
Solution Approach 2:
The patent implements nested conductive structures where conductive vias are embedded within dielectric layers, and multiple circuit layers are nested vertically. The conductive vias penetrate through dielectric layers to establish electrical connections between nested circuit layers, enabling compact integration of multiple I/O connections without linearly increasing substrate size or thickness.
2Adaptability or versatility
If the circuit layer size is increased to accommodate more connections, then the electrical performance is improved, but the substrate thickness and warpage increase
Solution Approach 1:
Instead of expanding circuit layers horizontally to add connections, the patent stacks multiple thin circuit layers vertically. This approach achieves high connection density through the vertical dimension while keeping each individual layer thin, thereby avoiding excessive total substrate thickness and reducing warpage.
Solution Approach 2:
The patent uses thin dielectric films and circuit layers stacked together to build the overall structure. Each layer remains thin and flexible, allowing the stack to better accommodate thermal and mechanical stresses without excessive warpage, while achieving high connection density through the cumulative effect of multiple layers.
3Ease of manufacture
If the substrate thickness is increased to support more circuit layers, then the manufacturing complexity is reduced, but the warpage and yield decrease
Solution Approach 1:
The patent optimizes the thickness parameters of individual dielectric layers and circuit layers within the stack. By carefully controlling the thickness of each layer rather than using a single thick substrate, the structure achieves mechanical stability and reduces warpage while maintaining the ability to support multiple I/O connections.
Solution Approach 2:
The patent creates a composite structure alternating between dielectric materials and conductive circuit layers. This composite architecture provides both mechanical support and electrical functionality, distributing stresses throughout the stack to reduce warpage while enabling complex multi-layer interconnections without excessive substrate thickness.
Data Source
AI summary
A circuit structure and an electronic structure are provided. The circuit structure includes a low-density conductive structure, a high-density conductive structure and an electrical connection structure. The high-density conductive structure is disposed on the low-density conductive structure. The electrical connection structure extends through the high-density conductive structure and is electrically connected to the low-density conductive structure. The electrical connection structure includes a shoulder portion.