Stacked CMOS Image Sensor With Polarizing Mask for Synchronized Light Capture

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Solution Overview

Problem

In low-lighting applications, CMOS image sensors using separate devices for unpolarized visible and near-infrared light waves face synchronization issues, leading to inaccurate image representation due to timing offsets, which increases computing resources needed for image processing.

Innovation Solution

A CMOS image sensor design with a first array of photodiodes stacked over a second array, featuring a polarization structure and filter structure that multiplexes unpolarized and polarized visible and near-infrared light waves, allowing simultaneous capture of polarized and unpolarized light waves, thereby improving image processing accuracy and reducing resource requirements.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If separate devices are used for capturing unpolarized visible and near-infrared light waves, then the capture of different light waves is possible, but synchronization issues occur leading to timing offsets and inaccurate image representation

Engineering Contradiction:
Improvelight wave capture capabilityVSAvoidimage representation accuracy
Core Design Contradiction:
Adaptability or versatilityVSMeasurement precision

Solution Approach 1:

The patent combines multiple photodiode types (first photodiodes for unpolarized visible light, second photodiodes for polarized visible light, and third photodiodes for near-infrared light) into a single stacked array structure. This merging eliminates the need for separate devices, thereby resolving synchronization issues and timing offsets while maintaining the ability to capture different light waves simultaneously.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent introduces a vertical stacking dimension to arrange different photodiode arrays at different depths within the same device. This three-dimensional arrangement allows simultaneous capture of multiple light wave types without requiring separate horizontal devices, thereby achieving both versatility and synchronization.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Adaptability or versatility

If separate devices are used for unpolarized and polarized light wave capture, then diverse light wave detection is achieved, but timing offsets increase computational resource requirements

Engineering Contradiction:
Improvelight wave detection diversityVSAvoidcomputational resource consumption
Core Design Contradiction:
Adaptability or versatilityVSUse of energy by moving object

Solution Approach 1:

By merging all light wave detection functions into a single stacked photodiode array, the patent eliminates timing offsets that would otherwise require complex computational correction. This reduces the computational resources and energy needed for image processing while maintaining diverse light wave detection capabilities.

Inventive Principle:
Principle #5Merging (Combining)

3Adaptability or versatility

If multiple separate devices are deployed for comprehensive light wave capture, then all light wave types can be detected, but device complexity and manufacturing resources increase

Engineering Contradiction:
Improvelight wave detection coverageVSAvoidsystem structure complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent merges multiple detection functions into a single integrated device with stacked photodiode arrays, dramatically reducing system complexity and the number of components required while maintaining comprehensive light wave detection coverage.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent implements a nested structure where different photodiode arrays are stacked vertically within the same device housing. Each layer of photodiodes is nested at a different depth, allowing comprehensive detection functionality to be contained within a single compact structure rather than requiring multiple separate devices.

Inventive Principle:
Principle #7Nested doll (Nesting)

4Adaptability or versatility

If separate devices are used for visible and near-infrared light capture, then spectral detection is possible, but synchronization issues arise

Engineering Contradiction:
Improvespectral detection capabilityVSAvoidsynchronization timing offset
Core Design Contradiction:
Adaptability or versatilityVSLoss of time

Solution Approach 1:

The patent combines photodiodes sensitive to different spectral ranges (visible and near-infrared) into a single stacked array, ensuring that all spectral detection occurs simultaneously within the same device. This eliminates the time delays and synchronization issues that arise when using separate devices for different spectral bands.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design enhances image processing performance by accurately multiplexing various light wave signals, reducing the computational and manufacturing resources needed for image processing systems.

Implementation Method 1

a photodiode configured to convert photons of incident light into a photocurrent of electrons

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Implementation Method 2

A pixel sensor of the CMOS image sensor may include a transfer transistor, which may include a photodiode configured to convert photons of incident light into a photocurrent of electrons

Methodology Applied
Scientific EffectPolarization: Polarisation

Data Source

PatentUS20240405053A1Optoelecronic device with polarizing mask structure
Publication Date: 2024.12.05 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20240405053A1 patent drawing
  • US20240405053A1 patent drawing
  • US20240405053A1 patent drawing

AI summary

Some implementations described herein include a complementary metal oxide semiconductor image sensor device and techniques to form the complementary metal oxide semiconductor image sensor device. The complementary metal oxide semiconductor image sensor device includes a includes a first array of photodiodes stacked over a second array of photodiodes. A polarization structure is between the first array of photodiodes and the second array of photodiodes. Signaling generated by the first array of photodiodes (e.g., signaling corresponding to unpolarized light waves) may be multiplexed with signaling generated by the second array of photodiodes (e.g., signaling corresponding to polarized light waves). The complementary metal oxide semiconductor image sensor device further includes a filter structure that filters visible light waves and near infrared light waves amongst the first array of photodiodes and the second array of photodiodes.