3D Stacked Decoupling Capacitor Structure for Power Supply Noise
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Solution Overview
Problem
Existing semiconductor devices face challenges in scaling down due to power supply noise fluctuations, which affect performance, and conventional decoupling capacitors have not been entirely satisfactory in addressing these issues.
Innovation Solution
The integration of high-density capacitor elements with comb-shaped electrodes and interlayer dielectric structures provides higher capacitance and compactness, effectively reducing power supply noise and parasitic inductance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional decoupling capacitors are used in semiconductor devices, then power supply noise can be reduced to some extent, but the capacitance per area is insufficient and the device size increases
Solution Approach 1:
The patent transitions from planar capacitor structures to three-dimensional vertically-stacked capacitor elements. Multiple capacitor elements are stacked in the vertical direction above each other, utilizing the third dimension (height) to increase capacitance without proportionally increasing the lateral footprint area. This dimensional change allows achieving higher capacitance per unit area.
Solution Approach 2:
The capacitor is divided into multiple discrete capacitor elements stacked vertically. Each capacitor element consists of separate electrode structures and dielectric layers. By segmenting the capacitor into multiple elements that can be stacked, the design achieves higher total capacitance while maintaining a compact footprint, as each element contributes to the overall capacitance without requiring lateral expansion.
2Productivity
If geometric size is decreased to continue scaling down, then functional density increases, but power supply noise fluctuations worsen
Solution Approach 1:
The patent addresses power supply noise in scaled-down devices by moving the capacitor solution into the vertical dimension. Instead of increasing lateral capacitor size (which would reduce functional density), multiple capacitor elements are stacked vertically to provide sufficient decoupling capacitance while maintaining high functional density in the lateral plane.
Solution Approach 2:
The capacitor elements are strategically positioned and integrated within the semiconductor device structure at specific locations where power supply noise mitigation is most needed. The local integration of vertically-stacked capacitors provides targeted power supply stabilization without compromising overall device performance or density.
3Reliability
If more capacitor elements are integrated to reduce power supply noise, then power supply stability improves, but device complexity increases
Solution Approach 1:
The patent combines multiple capacitor elements into a single integrated vertically-stacked structure. Rather than dispersing multiple separate capacitors throughout the device (which would increase complexity), the capacitor elements are merged into a compact stacked arrangement that functions as a unified decoupling solution, reducing overall structural complexity while maintaining power supply stability.
Solution Approach 2:
The vertically-stacked capacitor structure serves multiple functions: it provides decoupling capacitance for power supply noise reduction, maintains high functional density, and integrates within the existing semiconductor device architecture. This multi-functional design reduces the need for separate dedicated noise mitigation structures, thereby lowering overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves stable power supply and improved performance by offering higher capacitance per area, thinner decoupling capacitors, and enhanced heat dissipation in semiconductor devices.
Implementation Method 1
a first capacitor element (104) and a second capacitor element (104) successively stacked on the substrate (100)
Implementation Method 2
a first dielectric layer (102) between the substrate (100) and the first capacitor element (104)
Data Source
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AI summary
A semiconductor device includes a substrate and at least one capacitor element. The capacitor element is on the substrate. The capacitor element includes a first electrode with a first pad and first terminals connected to the first pad, wherein the first terminals extend away from the substrate; and a second electrode with a second pad and second terminals connected to the second pad, wherein the second terminals extend toward the substrate, wherein the first terminals and the second terminals are staggered and separated by an interlayer dielectric layer.