Stacked Decoupling Capacitor Structure for Smaller Semiconductor Packages

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Solution Overview

Problem

Decoupling capacitor structures in semiconductor devices occupy additional area, increasing the size of the device, which is a challenge in high-performance miniaturization.

Innovation Solution

The integration of a decoupling capacitor structure with electronic components, where conductive patterns on the substrate serve as terminals, allowing the structure to be stacked without requiring additional space.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a decoupling capacitor structure is added to filter signals, then signal filtering performance is improved, but the device area increases

Engineering Contradiction:
Improvesignal filtering performanceVSAvoiddevice area
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent merges the decoupling capacitor structure with the electronic component by making the capacitor plates integral parts of the component structure. The first conductive plate is formed as part of the electronic component substrate, and the second conductive plate is formed on the same substrate, eliminating the need for separate capacitor components and reducing overall device area while maintaining signal filtering functionality.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent transitions from a planar layout to a three-dimensional stacked configuration. The decoupling capacitor is formed vertically within the electronic component structure, with conductive plates separated by dielectric layers in the vertical dimension. This allows the capacitor to occupy vertical space rather than horizontal space, thereby reducing the device footprint while maintaining filtering performance.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If conventional decoupling capacitor structures are used, then signal filtering is achieved, but additional manufacturing steps and materials are required

Engineering Contradiction:
Improvesignal filteringVSAvoidmanufacturing complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The manufacturing process merges the formation of the decoupling capacitor with the existing electronic component fabrication steps. The conductive plates are formed using the same photolithography and deposition processes already employed for the electronic component traces and electrodes, eliminating the need for separate capacitor manufacturing steps and reducing overall process complexity.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The conductive plates and dielectric layers serve dual functions: they form the electronic component interconnects and simultaneously create the decoupling capacitor structure. This multi-functionality reduces the number of dedicated manufacturing steps required for capacitor formation, simplifying the overall manufacturing process while achieving both electronic component functionality and signal filtering.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration results in a semiconductor device with a relatively small size compared to conventional designs, maintaining performance by filtering signals without increasing the device footprint.

Implementation Method 1

a decoupling capacitor structure, which may be configured to filter signals transmitted to or from the electronic component

Methodology Applied
Scientific EffectCapacitance: Capacitance

Implementation Method 2

configured to filter signals transmitted to or from the electronic component

Methodology Applied
Scientific EffectSignal filtering: Filter (electronic)

Data Source

PatentUS12482795B2Semiconductor device with decoupling capacitor structure and method for manufacturing the same
Publication Date: 2025.11.25 NAN YA TECH
  • US12482795B2 patent drawing
  • US12482795B2 patent drawing
  • US12482795B2 patent drawing

AI summary

A semiconductor device and method for manufacturing the same are provided. The semiconductor device includes a substrate, a decoupling capacitor structure, and an electronic component. The decoupling capacitor structure is disposed on the substrate. The electronic component is disposed on the decoupling capacitor structure and electrically connected to the decoupling capacitor structure. The electronic component is stacked over the decoupling capacitor structure.